A novel method of forming a thin single crystal silicon diaphragm with precise thickness for potential use in fabricating micromechanical sensors using merged epitaxial lateral overgrowth

Abul Ehsanul Kabir, James J. Pak, Gerold W. Neudeck, James H. Logsdon, David R. DeRoo, Steven E. Staller

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A novel epitaxial growth and micromachining technology were used to form a thin single-crystal silicon diaphragm for micromechanical sensors. Merged epitaxial lateral overgrowth (MELO) of silicon and SiO2 etch-stop technology were successfully used to fabricate a diaphragm with a precise thickness. Its implementation to the formation of a large area thin diaphragm is demonstrated. The silicon epitaxial growth rate is the only controlling parameter to define the diaphragm thickness. An average growth uniformity of the MELO film across the three-inch wafers was determined to be less than 5%. However, the average percentage variation of the growth at the same position on the wafer, from wafer to wafer in a single run, was measured to be within 2%. Diaphragms of 9 ± 0.05 μm thick and more than 200 μm wide and 1000 μm long were successfully fabricated using this technique.

Original languageEnglish
Title of host publicationProceedings Ninth Biennial University/Government/Industry Microelectronics Symposium
Editors Anon
PublisherPubl by IEEE
Pages226-231
Number of pages6
ISBN (Print)0780301092
Publication statusPublished - 1991
EventProceedings of the 9th Biennial University/Government/Industry Microelectronics Symposium - Melbourne, FL, USA
Duration: 1991 Jun 121991 Jun 14

Publication series

NameProceedings Ninth Biennial University/Government/Industry Microelectronics Symposium

Other

OtherProceedings of the 9th Biennial University/Government/Industry Microelectronics Symposium
CityMelbourne, FL, USA
Period91/6/1291/6/14

ASJC Scopus subject areas

  • General Engineering

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