A novel type of spin injection barrier in a GaAs based two-dimensional electron gas system

H. C. Koo; Hyunjung Yi; J. D. Song; J. B. Ko; Joonyeon Chang; S. H. Han

doi:10.1109/TMAG.2005.854798

A novel type of spin injection barrier in a GaAs based two-dimensional electron gas system

H. C. Koo, Hyunjung Yi, J. D. Song, J. B. Ko, Joonyeon Chang, S. H. Han

KU-KIST Graduate School of Converging Science and Technology

Research output: Contribution to journal › Article › peer-review

Abstract

A low transmission barrier is a crucial factor for the efficient spin injection, and an oxide barrier is commonly used for the insulator between the ferromagnet and the semiconductor. After heat treatment at the furnace, an AlAs layer was converted to an aluminum oxide layer, and arsenic gas was evaporated. This new method of forming spin injection barrier on the two-dimensional electron gas (2-DEG) system is very efficient to obtain tunneling behavior.

Original language	English
Pages (from-to)	2589-2591
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	41
Issue number	10
DOIs	https://doi.org/10.1109/TMAG.2005.854798
Publication status	Published - 2005 Oct

Keywords

AlAs
Aluminum oxide
Furnace
Low transmission barrier
Spin injection

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TMAG.2005.854798

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title = "A novel type of spin injection barrier in a GaAs based two-dimensional electron gas system",

abstract = "A low transmission barrier is a crucial factor for the efficient spin injection, and an oxide barrier is commonly used for the insulator between the ferromagnet and the semiconductor. After heat treatment at the furnace, an AlAs layer was converted to an aluminum oxide layer, and arsenic gas was evaporated. This new method of forming spin injection barrier on the two-dimensional electron gas (2-DEG) system is very efficient to obtain tunneling behavior.",

keywords = "AlAs, Aluminum oxide, Furnace, Low transmission barrier, Spin injection",

author = "Koo, {H. C.} and Hyunjung Yi and Song, {J. D.} and Ko, {J. B.} and Joonyeon Chang and Han, {S. H.}",

note = "Funding Information: This work was supported by the VISION 21 PROGRAM of KIST.",

year = "2005",

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doi = "10.1109/TMAG.2005.854798",

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journal = "IEEE Transactions on Magnetics",

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T1 - A novel type of spin injection barrier in a GaAs based two-dimensional electron gas system

AU - Koo, H. C.

AU - Yi, Hyunjung

AU - Song, J. D.

AU - Ko, J. B.

AU - Chang, Joonyeon

AU - Han, S. H.

N1 - Funding Information: This work was supported by the VISION 21 PROGRAM of KIST.

PY - 2005/10

Y1 - 2005/10

N2 - A low transmission barrier is a crucial factor for the efficient spin injection, and an oxide barrier is commonly used for the insulator between the ferromagnet and the semiconductor. After heat treatment at the furnace, an AlAs layer was converted to an aluminum oxide layer, and arsenic gas was evaporated. This new method of forming spin injection barrier on the two-dimensional electron gas (2-DEG) system is very efficient to obtain tunneling behavior.

AB - A low transmission barrier is a crucial factor for the efficient spin injection, and an oxide barrier is commonly used for the insulator between the ferromagnet and the semiconductor. After heat treatment at the furnace, an AlAs layer was converted to an aluminum oxide layer, and arsenic gas was evaporated. This new method of forming spin injection barrier on the two-dimensional electron gas (2-DEG) system is very efficient to obtain tunneling behavior.

KW - AlAs

KW - Aluminum oxide

KW - Furnace

KW - Low transmission barrier

KW - Spin injection

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DO - 10.1109/TMAG.2005.854798

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SP - 2589

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JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 10

ER -

A novel type of spin injection barrier in a GaAs based two-dimensional electron gas system

Abstract

Keywords

ASJC Scopus subject areas

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