A p-n heterojunction diode constructed with A p-Si nanowire and an n-ZnO nanoparticle thin-film by dielectrophoresis

Kwangeun Kim; Myeongwon Lee; Junggwon Yun; Sangsig Kim

doi:10.5370/KIEE.2011.60.1.105

A p-n heterojunction diode constructed with A p-Si nanowire and an n-ZnO nanoparticle thin-film by dielectrophoresis

Kwangeun Kim, Myeongwon Lee, Junggwon Yun, Sangsig Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Newly-developed fabrication of a p-n heterojunction diode constructed with a p-Si nanowire (NW) and an n-ZnO nanoparticle (NP) thin-film by the dielectrophoresis (DEP) technique is demonstrated in this study. With the bias of 20 Vp-p at the input frequency of 1 MHz, the most efficient assembly of the n-ZnO NPs is shown for the fabrication of the p-n heterojunction diode with a p-Si NW. The p-n heterojunction diode fabricated in this study represents current rectifying characteristics with the turn on voltage of 1.1 V. The diode can be applied to the fabrication of optoelectrical devices such as photodetectors, light-emitting diodes (LEDs), or solar cells based on the high conductivity of the NW and the high surface to volume ratio of the NP thin film.

Original language	English
Pages (from-to)	105-108
Number of pages	4
Journal	Transactions of the Korean Institute of Electrical Engineers
Volume	60
Issue number	1
DOIs	https://doi.org/10.5370/KIEE.2011.60.1.105
Publication status	Published - 2011 Jan

Keywords

Dielectrophoresis
Nanoparticle
Nanowire
P-n heterojunction
Si
Zno

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.5370/KIEE.2011.60.1.105

Cite this

@article{a6e37c576b12454391c6d2a3f3c0451e,

title = "A p-n heterojunction diode constructed with A p-Si nanowire and an n-ZnO nanoparticle thin-film by dielectrophoresis",

abstract = "Newly-developed fabrication of a p-n heterojunction diode constructed with a p-Si nanowire (NW) and an n-ZnO nanoparticle (NP) thin-film by the dielectrophoresis (DEP) technique is demonstrated in this study. With the bias of 20 Vp-p at the input frequency of 1 MHz, the most efficient assembly of the n-ZnO NPs is shown for the fabrication of the p-n heterojunction diode with a p-Si NW. The p-n heterojunction diode fabricated in this study represents current rectifying characteristics with the turn on voltage of 1.1 V. The diode can be applied to the fabrication of optoelectrical devices such as photodetectors, light-emitting diodes (LEDs), or solar cells based on the high conductivity of the NW and the high surface to volume ratio of the NP thin film.",

keywords = "Dielectrophoresis, Nanoparticle, Nanowire, P-n heterojunction, Si, Zno",

author = "Kwangeun Kim and Myeongwon Lee and Junggwon Yun and Sangsig Kim",

year = "2011",

month = jan,

doi = "10.5370/KIEE.2011.60.1.105",

language = "English",

volume = "60",

pages = "105--108",

journal = "Transactions of the Korean Institute of Electrical Engineers",

issn = "1975-8359",

publisher = "Korean Institute of Electrical Engineers",

number = "1",

}

TY - JOUR

T1 - A p-n heterojunction diode constructed with A p-Si nanowire and an n-ZnO nanoparticle thin-film by dielectrophoresis

AU - Kim, Kwangeun

AU - Lee, Myeongwon

AU - Yun, Junggwon

AU - Kim, Sangsig

PY - 2011/1

Y1 - 2011/1

N2 - Newly-developed fabrication of a p-n heterojunction diode constructed with a p-Si nanowire (NW) and an n-ZnO nanoparticle (NP) thin-film by the dielectrophoresis (DEP) technique is demonstrated in this study. With the bias of 20 Vp-p at the input frequency of 1 MHz, the most efficient assembly of the n-ZnO NPs is shown for the fabrication of the p-n heterojunction diode with a p-Si NW. The p-n heterojunction diode fabricated in this study represents current rectifying characteristics with the turn on voltage of 1.1 V. The diode can be applied to the fabrication of optoelectrical devices such as photodetectors, light-emitting diodes (LEDs), or solar cells based on the high conductivity of the NW and the high surface to volume ratio of the NP thin film.

AB - Newly-developed fabrication of a p-n heterojunction diode constructed with a p-Si nanowire (NW) and an n-ZnO nanoparticle (NP) thin-film by the dielectrophoresis (DEP) technique is demonstrated in this study. With the bias of 20 Vp-p at the input frequency of 1 MHz, the most efficient assembly of the n-ZnO NPs is shown for the fabrication of the p-n heterojunction diode with a p-Si NW. The p-n heterojunction diode fabricated in this study represents current rectifying characteristics with the turn on voltage of 1.1 V. The diode can be applied to the fabrication of optoelectrical devices such as photodetectors, light-emitting diodes (LEDs), or solar cells based on the high conductivity of the NW and the high surface to volume ratio of the NP thin film.

KW - Dielectrophoresis

KW - Nanoparticle

KW - Nanowire

KW - P-n heterojunction

KW - Si

KW - Zno

UR - http://www.scopus.com/inward/record.url?scp=79551499851&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79551499851&partnerID=8YFLogxK

U2 - 10.5370/KIEE.2011.60.1.105

DO - 10.5370/KIEE.2011.60.1.105

M3 - Article

AN - SCOPUS:79551499851

SN - 1975-8359

VL - 60

SP - 105

EP - 108

JO - Transactions of the Korean Institute of Electrical Engineers

JF - Transactions of the Korean Institute of Electrical Engineers

IS - 1

ER -

A p-n heterojunction diode constructed with A p-Si nanowire and an n-ZnO nanoparticle thin-film by dielectrophoresis

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this