@article{f17d7597630847a2939323eeb96805b7,
title = "A pn heterojunction diode constructed with a n -type ZnO nanowire and a p -type HgTe nanoparticle thin film",
abstract = "We demonstrate a pn heterojunction diode constructed with a n -type ZnO nanowire (NW) and a p -type HgTe nanoparticle (NP) thin film on a SiO 2 /p-Si substrate. For the pn heterojunction diode, the rectifying characteristics of both the dark current and the photocurrent excited by 633 nm wavelength light were observed, but the photocurrent excited by 325 nm wavelength light possesses Ohmic characteristics. The optoelectronic characteristics of the pn heterojunction diode were compared with those of the ZnO NW and HgTe NP thin film composing it.",
author = "Hojun Seong and Kyoungah Cho and Sangsig Kim",
note = "Funding Information: This work was supported by the Center for Integrated-Nano-Systems (CINS) of the Korea Research Foundation (Grant No. KRF-2006-005-J03601), the Medium-term Strategic Technology Development Program, and the “SystemIC2010” project of the Korea Ministry of Commerce, Industry and Energy, the Korea Science and Engineering Foundation (KOSEF) through the National Research Laboratory Program [Program No. R0A-2005-000-10045-0 (2008)], and the Nano R&D Program (Program No. M10703000980-08M0300-98010). Copyright: Copyright 2009 Elsevier B.V., All rights reserved.",
year = "2009",
doi = "10.1063/1.3067861",
language = "English",
volume = "94",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "4",
}