Abstract
A small-footprint nanobeam photonic crystal laser made of InGaAsP material is directly integrated on a SiO2/Si substrate without using adhesive material via transfer-printing processes (i.e., dry transfer-printing). The transferred nanobeam structure with a physical volume of ∼6.6 × 0.58 × 0.28 μm3 (∼10.5 (λ/n)3) shows single mode lasing near 1550 nm with continuous-wave (CW) operation at room-temperature, where effective lasing threshold power was as low as 9 μW. This CW operation was achieved mainly due to efficient heat dissipation provided by direct contact between the nanobeam and the substrate. This transfer-printed nanobeam laser could be a promising candidate for the next-generation light source with a feature of low-power consumption in ultracompact photonic integrated circuits.
Original language | English |
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Pages (from-to) | 12115-12121 |
Number of pages | 7 |
Journal | Optics Express |
Volume | 22 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2014 |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics