A printed nanobeam laser on a SiO2/Si substrate for low-threshold continuous-wave operation

Indra Karnadi; Jaehyeon Son; Ju Young Kim; Hoon Jang; Seungwoo Lee; Ki Soo Kim; Bumki Min; Yong Hee Lee

doi:10.1364/OE.22.012115

A printed nanobeam laser on a SiO₂/Si substrate for low-threshold continuous-wave operation

Indra Karnadi, Jaehyeon Son, Ju Young Kim, Hoon Jang, Seungwoo Lee, Ki Soo Kim, Bumki Min, Yong Hee Lee

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

A small-footprint nanobeam photonic crystal laser made of InGaAsP material is directly integrated on a SiO₂/Si substrate without using adhesive material via transfer-printing processes (i.e., dry transfer-printing). The transferred nanobeam structure with a physical volume of ∼6.6 × 0.58 × 0.28 μm³ (∼10.5 (λ/n)³) shows single mode lasing near 1550 nm with continuous-wave (CW) operation at room-temperature, where effective lasing threshold power was as low as 9 μW. This CW operation was achieved mainly due to efficient heat dissipation provided by direct contact between the nanobeam and the substrate. This transfer-printed nanobeam laser could be a promising candidate for the next-generation light source with a feature of low-power consumption in ultracompact photonic integrated circuits.

Original language	English
Pages (from-to)	12115-12121
Number of pages	7
Journal	Optics Express
Volume	22
Issue number	10
DOIs	https://doi.org/10.1364/OE.22.012115
Publication status	Published - 2014

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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10.1364/OE.22.012115

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abstract = "A small-footprint nanobeam photonic crystal laser made of InGaAsP material is directly integrated on a SiO2/Si substrate without using adhesive material via transfer-printing processes (i.e., dry transfer-printing). The transferred nanobeam structure with a physical volume of ∼6.6 × 0.58 × 0.28 μm3 (∼10.5 (λ/n)3) shows single mode lasing near 1550 nm with continuous-wave (CW) operation at room-temperature, where effective lasing threshold power was as low as 9 μW. This CW operation was achieved mainly due to efficient heat dissipation provided by direct contact between the nanobeam and the substrate. This transfer-printed nanobeam laser could be a promising candidate for the next-generation light source with a feature of low-power consumption in ultracompact photonic integrated circuits.",

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T1 - A printed nanobeam laser on a SiO2/Si substrate for low-threshold continuous-wave operation

AU - Karnadi, Indra

AU - Son, Jaehyeon

AU - Kim, Ju Young

AU - Jang, Hoon

AU - Lee, Seungwoo

AU - Kim, Ki Soo

AU - Min, Bumki

AU - Lee, Yong Hee

PY - 2014

Y1 - 2014

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AB - A small-footprint nanobeam photonic crystal laser made of InGaAsP material is directly integrated on a SiO2/Si substrate without using adhesive material via transfer-printing processes (i.e., dry transfer-printing). The transferred nanobeam structure with a physical volume of ∼6.6 × 0.58 × 0.28 μm3 (∼10.5 (λ/n)3) shows single mode lasing near 1550 nm with continuous-wave (CW) operation at room-temperature, where effective lasing threshold power was as low as 9 μW. This CW operation was achieved mainly due to efficient heat dissipation provided by direct contact between the nanobeam and the substrate. This transfer-printed nanobeam laser could be a promising candidate for the next-generation light source with a feature of low-power consumption in ultracompact photonic integrated circuits.

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A printed nanobeam laser on a SiO₂/Si substrate for low-threshold continuous-wave operation

Abstract

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