A small-footprint nanobeam photonic crystal laser made of InGaAsP material is directly integrated on a SiO2/Si substrate without using adhesive material via transfer-printing processes (i.e., dry transfer-printing). The transferred nanobeam structure with a physical volume of ∼6.6 × 0.58 × 0.28 μm3 (∼10.5 (λ/n)3) shows single mode lasing near 1550 nm with continuous-wave (CW) operation at room-temperature, where effective lasing threshold power was as low as 9 μW. This CW operation was achieved mainly due to efficient heat dissipation provided by direct contact between the nanobeam and the substrate. This transfer-printed nanobeam laser could be a promising candidate for the next-generation light source with a feature of low-power consumption in ultracompact photonic integrated circuits.
|Number of pages||7|
|Publication status||Published - 2014|
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics