A printed nanobeam laser on a SiO2/Si substrate for low-threshold continuous-wave operation

Indra Karnadi; Jaehyeon Son; Ju Young Kim; Hoon Jang; Seungwoo Lee; Ki Soo Kim; Bumki Min; Yong Hee Lee

doi:10.1364/OE.22.012115

A printed nanobeam laser on a SiO₂/Si substrate for low-threshold continuous-wave operation

Indra Karnadi, Jaehyeon Son, Ju Young Kim, Hoon Jang, Seungwoo Lee, Ki Soo Kim, Bumki Min, Yong Hee Lee

KU-KIST Graduate School of Converging Science and Technology

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

A small-footprint nanobeam photonic crystal laser made of InGaAsP material is directly integrated on a SiO₂/Si substrate without using adhesive material via transfer-printing processes (i.e., dry transfer-printing). The transferred nanobeam structure with a physical volume of ∼6.6 × 0.58 × 0.28 μm³ (∼10.5 (λ/n)³) shows single mode lasing near 1550 nm with continuous-wave (CW) operation at room-temperature, where effective lasing threshold power was as low as 9 μW. This CW operation was achieved mainly due to efficient heat dissipation provided by direct contact between the nanobeam and the substrate. This transfer-printed nanobeam laser could be a promising candidate for the next-generation light source with a feature of low-power consumption in ultracompact photonic integrated circuits.

Original language	English
Pages (from-to)	12115-12121
Number of pages	7
Journal	Optics Express
Volume	22
Issue number	10
DOIs	https://doi.org/10.1364/OE.22.012115
Publication status	Published - 2014

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

Access to Document

10.1364/OE.22.012115

Cite this

@article{88fc2a21b2494c77b56442c28240f03f,

title = "A printed nanobeam laser on a SiO2/Si substrate for low-threshold continuous-wave operation",

abstract = "A small-footprint nanobeam photonic crystal laser made of InGaAsP material is directly integrated on a SiO2/Si substrate without using adhesive material via transfer-printing processes (i.e., dry transfer-printing). The transferred nanobeam structure with a physical volume of ∼6.6 × 0.58 × 0.28 μm3 (∼10.5 (λ/n)3) shows single mode lasing near 1550 nm with continuous-wave (CW) operation at room-temperature, where effective lasing threshold power was as low as 9 μW. This CW operation was achieved mainly due to efficient heat dissipation provided by direct contact between the nanobeam and the substrate. This transfer-printed nanobeam laser could be a promising candidate for the next-generation light source with a feature of low-power consumption in ultracompact photonic integrated circuits.",

author = "Indra Karnadi and Jaehyeon Son and Kim, {Ju Young} and Hoon Jang and Seungwoo Lee and Kim, {Ki Soo} and Bumki Min and Lee, {Yong Hee}",

year = "2014",

doi = "10.1364/OE.22.012115",

language = "English",

volume = "22",

pages = "12115--12121",

journal = "Optics Express",

issn = "1094-4087",

publisher = "The Optical Society",

number = "10",

}

TY - JOUR

T1 - A printed nanobeam laser on a SiO2/Si substrate for low-threshold continuous-wave operation

AU - Karnadi, Indra

AU - Son, Jaehyeon

AU - Kim, Ju Young

AU - Jang, Hoon

AU - Lee, Seungwoo

AU - Kim, Ki Soo

AU - Min, Bumki

AU - Lee, Yong Hee

PY - 2014

Y1 - 2014

N2 - A small-footprint nanobeam photonic crystal laser made of InGaAsP material is directly integrated on a SiO2/Si substrate without using adhesive material via transfer-printing processes (i.e., dry transfer-printing). The transferred nanobeam structure with a physical volume of ∼6.6 × 0.58 × 0.28 μm3 (∼10.5 (λ/n)3) shows single mode lasing near 1550 nm with continuous-wave (CW) operation at room-temperature, where effective lasing threshold power was as low as 9 μW. This CW operation was achieved mainly due to efficient heat dissipation provided by direct contact between the nanobeam and the substrate. This transfer-printed nanobeam laser could be a promising candidate for the next-generation light source with a feature of low-power consumption in ultracompact photonic integrated circuits.

AB - A small-footprint nanobeam photonic crystal laser made of InGaAsP material is directly integrated on a SiO2/Si substrate without using adhesive material via transfer-printing processes (i.e., dry transfer-printing). The transferred nanobeam structure with a physical volume of ∼6.6 × 0.58 × 0.28 μm3 (∼10.5 (λ/n)3) shows single mode lasing near 1550 nm with continuous-wave (CW) operation at room-temperature, where effective lasing threshold power was as low as 9 μW. This CW operation was achieved mainly due to efficient heat dissipation provided by direct contact between the nanobeam and the substrate. This transfer-printed nanobeam laser could be a promising candidate for the next-generation light source with a feature of low-power consumption in ultracompact photonic integrated circuits.

UR - http://www.scopus.com/inward/record.url?scp=84901261270&partnerID=8YFLogxK

U2 - 10.1364/OE.22.012115

DO - 10.1364/OE.22.012115

M3 - Article

AN - SCOPUS:84901261270

SN - 1094-4087

VL - 22

SP - 12115

EP - 12121

JO - Optics Express

JF - Optics Express

IS - 10

ER -

A printed nanobeam laser on a SiO₂/Si substrate for low-threshold continuous-wave operation

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this