@article{41f7a000065e4a3ab9bcbd7caa49e8a7,
title = "A Q-band injection-locked frequency divider with inductive feedback for a locking range enhancement",
abstract = "An injection-locked frequency divider (ILFD) with an inductive feedback for enhanced locking range has been developed in a commercial 0.13 μm Si RFCMOS technology and compared with a conventional ILFD. The proposed ILFD showed a significant improvement in the locking range over the conventional ILFD, operating at a frequency range of 43.6048.95 GHz. The dc power consumption of the ILFD was 0.58 mW with a supply voltage of 1.2 V for the divider core.",
keywords = "CMOS integrated circuits, frequency division, injection locked oscillators",
author = "Hyogi Seo and Seungwoo Seo and Sanggeun Jeon and Rieh, {Jae Sung}",
note = "Funding Information: Manuscript received December 29, 2010; revised March 10, 2011; accepted April 03, 2011. Date of publication May 19, 2011; date of current version June 02, 2011. This work was supported by the IT R&D program of MKE/KEIT [KI001855] and Samsung. H. Seo, S. Jeon, and J.-S. Rieh are with the School of Electrical Engineering, Korea University, Seoul 136-713, Korea (e-mail: jsrieh@korea.ac.kr). S. Seo was with the Korea University, Seoul 136–713, Korea. He is now with the Agency for Defense Development, Daejeon 305-152, Korea. Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LMWC.2011.2141124 Fig. 1. Circuit schematics of (a) conventional ILFD and (b) proposed ILFD. Buffers are not shown for simplicity.",
year = "2011",
month = jun,
doi = "10.1109/LMWC.2011.2141124",
language = "English",
volume = "21",
pages = "317--319",
journal = "IEEE Microwave and Wireless Components Letters",
issn = "1531-1309",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",
}