A Q-band injection-locked frequency divider with inductive feedback for a locking range enhancement

Hyogi Seo, Seungwoo Seo, Sanggeun Jeon, Jae Sung Rieh

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


An injection-locked frequency divider (ILFD) with an inductive feedback for enhanced locking range has been developed in a commercial 0.13 μm Si RFCMOS technology and compared with a conventional ILFD. The proposed ILFD showed a significant improvement in the locking range over the conventional ILFD, operating at a frequency range of 43.6048.95 GHz. The dc power consumption of the ILFD was 0.58 mW with a supply voltage of 1.2 V for the divider core.

Original languageEnglish
Article number5770185
Pages (from-to)317-319
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Issue number6
Publication statusPublished - 2011 Jun

Bibliographical note

Funding Information:
Manuscript received December 29, 2010; revised March 10, 2011; accepted April 03, 2011. Date of publication May 19, 2011; date of current version June 02, 2011. This work was supported by the IT R&D program of MKE/KEIT [KI001855] and Samsung. H. Seo, S. Jeon, and J.-S. Rieh are with the School of Electrical Engineering, Korea University, Seoul 136-713, Korea (e-mail: jsrieh@korea.ac.kr). S. Seo was with the Korea University, Seoul 136–713, Korea. He is now with the Agency for Defense Development, Daejeon 305-152, Korea. Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LMWC.2011.2141124 Fig. 1. Circuit schematics of (a) conventional ILFD and (b) proposed ILFD. Buffers are not shown for simplicity.


  • CMOS integrated circuits
  • frequency division
  • injection locked oscillators

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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