Radiation-hardened IA and ADC circuits are essential for a safe and efficient sensor system. In this paper, three-op-amp IA and SAR ADC were designed using radiation-hardened techniques and measured and proved to be robust to TID and SEE. Both Radiation-hardened IA and ADC were fabricated in a 65nm CMOS process and measured in an ARTI high-level radiation environment. The proposed IA was able to confirm that the voltage gain was accurate against TID effects in the harsh radiation environment. The proposed ADC obtained 9.59 ENOB at 5.54mW power consumption.
|Title of host publication||2020 IEEE International Conference on Consumer Electronics - Asia, ICCE-Asia 2020|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|Publication status||Published - 2020 Nov 1|
|Event||2020 IEEE International Conference on Consumer Electronics - Asia, ICCE-Asia 2020 - Seoul, Korea, Republic of|
Duration: 2020 Nov 1 → 2020 Nov 3
|Name||2020 IEEE International Conference on Consumer Electronics - Asia, ICCE-Asia 2020|
|Conference||2020 IEEE International Conference on Consumer Electronics - Asia, ICCE-Asia 2020|
|Country/Territory||Korea, Republic of|
|Period||20/11/1 → 20/11/3|
Bibliographical noteFunding Information:
This research was supported by the National R&D Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science & ICT (NRF-2017M1A7A1A01016260). The chip fabrication and EDA tool were supported by the IC Design Education Center (IDEC), Korea.
© 2020 IEEE.
- Instrumentation amplifier
- SAR ADC
- Sensor Readout IC
- Single event effect
- Soft error
- Total ionizing dose
ASJC Scopus subject areas
- Computer Science Applications
- Electrical and Electronic Engineering
- Media Technology