Abstract
A rapid progress of the next-generation non-volatile memory device has been made in recent years. Metal/insulator/Metal multi-layer structure resistive RAM(ReRAM) has attracted a great deal of attention because it has advantages of simple fabrication, low cost, low power consumption, and low operating voltage. This paper describes the working principle of the ReRAM device, a review of fabrication techniques, and characteristics of flexible ReRAM devices using graphene oxide as an insulating layer and ReRAM devices using multi-layered insulator. The switching characteristics of the above ReRAM devices have been compared. The oxidized graphene could be employed as an insulator of next generation ReRAM devices.
Original language | English |
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Pages (from-to) | 1369-1375 |
Number of pages | 7 |
Journal | Transactions of the Korean Institute of Electrical Engineers |
Volume | 65 |
Issue number | 8 |
DOIs | |
Publication status | Published - 2016 Aug |
Keywords
- Graphene oxide
- MIM
- RESET
- ReRAM
- SET
ASJC Scopus subject areas
- Electrical and Electronic Engineering