A review of Ga2O3 materials, processing, and devices

S. J. Pearton, Jiancheng Yang, Patrick H. Cary, F. Ren, Jihyun Kim, Marko J. Tadjer, Michael A. Mastro

Research output: Contribution to journalReview articlepeer-review

1905 Citations (Scopus)


Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond existing technologies due to its large bandgap. It is usually reported that there are five different polymorphs of Ga2O3, namely, the monoclinic (β-Ga2O3), rhombohedral (α), defective spinel (γ), cubic (δ), or orthorhombic (ϵ) structures. Of these, the β-polymorph is the stable form under normal conditions and has been the most widely studied and utilized. Since melt growth techniques can be used to grow bulk crystals of β-GaO3, the cost of producing larger area, uniform substrates is potentially lower compared to the vapor growth techniques used to manufacture bulk crystals of GaN and SiC. The performance of technologically important high voltage rectifiers and enhancement-mode Metal-Oxide Field Effect Transistors benefit from the larger critical electric field of β-Ga2O3 relative to either SiC or GaN. However, the absence of clear demonstrations of p-type doping in Ga2O3, which may be a fundamental issue resulting from the band structure, makes it very difficult to simultaneously achieve low turn-on voltages and ultra-high breakdown. The purpose of this review is to summarize recent advances in the growth, processing, and device performance of the most widely studied polymorph, β-Ga2O3. The role of defects and impurities on the transport and optical properties of bulk, epitaxial, and nanostructures material, the difficulty in p-type doping, and the development of processing techniques like etching, contact formation, dielectrics for gate formation, and passivation are discussed. Areas where continued development is needed to fully exploit the properties of Ga2O3 are identified.

Original languageEnglish
Article number011301
JournalApplied Physics Reviews
Issue number1
Publication statusPublished - 2018 Mar 1

Bibliographical note

Publisher Copyright:
© 2018 Author(s).

ASJC Scopus subject areas

  • General Physics and Astronomy


Dive into the research topics of 'A review of Ga2O3 materials, processing, and devices'. Together they form a unique fingerprint.

Cite this