A Ru-Pt alloy electrode to suppress leakage currents of dynamic random-access memory capacitors

Jung Joon Pyeon; Cheol Jin Cho; Doo Seok Jeong; Jin Sang Kim; Chong Yun Kang; Seong Keun Kim

doi:10.1088/1361-6528/aaddbc

A Ru-Pt alloy electrode to suppress leakage currents of dynamic random-access memory capacitors

Jung Joon Pyeon, Cheol Jin Cho, Doo Seok Jeong, Jin Sang Kim, Chong Yun Kang, Seong Keun Kim

KU-KIST Graduate School of Converging Science and Technology

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Rutile TiO₂, a high temperature phase, has attracted interest as a capacitor dielectric in dynamic random-access memories (DRAMs). Despite its high dielectric constant of >80, large leakage currents caused by a low Schottky barrier height at the TiO₂/electrode interface have hindered the use of rutile TiO₂ as a commercial DRAM capacitor. Here, we propose a new Ru-Pt alloy electrode to increase the height of the Schottky barrier. The Ru-Pt mixed layer was grown by atomic layer deposition. The atomic ratio of Ru/Pt varied in the entire range from 100 at.% Ru to 100 at.% Pt. Rutile TiO₂ films were inductively formed only on the Ru-Pt layer containing ≤43 at.% Pt, while anatase TiO₂ films with a relatively low dielectric constant (∼40) were formed at Pt compositions > 63 at.%. The Ru-Pt (40-50 at.%) layer also attained an increase in work function of ∼0.3-0.4 eV, leading to an improvement in the leakage currents of the TiO₂/Ru-Pt capacitor. These findings suggested that a Ru-Pt layer could serve as a promising electrode for next-generation DRAM capacitors.

Original language	English
Article number	455202
Journal	Nanotechnology
Volume	29
Issue number	45
DOIs	https://doi.org/10.1088/1361-6528/aaddbc
Publication status	Published - 2018 Sept 14

Bibliographical note

Funding Information:
This work was supported by the Future Semiconductor Device Technology Development Program (10047231) funded by MOTIE (Ministry of Trade, Industry & Energy) and KSRC (Korea Semiconductor Research Consortium); and by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (NRF-2018R1A2B2007525).

Publisher Copyright:
© 2018 IOP Publishing Ltd.

Keywords

DRAM
RuPt electrode
capacitor
rutile TiO2

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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10.1088/1361-6528/aaddbc

Cite this

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title = "A Ru-Pt alloy electrode to suppress leakage currents of dynamic random-access memory capacitors",

abstract = "Rutile TiO2, a high temperature phase, has attracted interest as a capacitor dielectric in dynamic random-access memories (DRAMs). Despite its high dielectric constant of >80, large leakage currents caused by a low Schottky barrier height at the TiO2/electrode interface have hindered the use of rutile TiO2 as a commercial DRAM capacitor. Here, we propose a new Ru-Pt alloy electrode to increase the height of the Schottky barrier. The Ru-Pt mixed layer was grown by atomic layer deposition. The atomic ratio of Ru/Pt varied in the entire range from 100 at.% Ru to 100 at.% Pt. Rutile TiO2 films were inductively formed only on the Ru-Pt layer containing ≤43 at.% Pt, while anatase TiO2 films with a relatively low dielectric constant (∼40) were formed at Pt compositions > 63 at.%. The Ru-Pt (40-50 at.%) layer also attained an increase in work function of ∼0.3-0.4 eV, leading to an improvement in the leakage currents of the TiO2/Ru-Pt capacitor. These findings suggested that a Ru-Pt layer could serve as a promising electrode for next-generation DRAM capacitors.",

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author = "Pyeon, {Jung Joon} and Cho, {Cheol Jin} and Jeong, {Doo Seok} and Kim, {Jin Sang} and Kang, {Chong Yun} and Kim, {Seong Keun}",

note = "Funding Information: This work was supported by the Future Semiconductor Device Technology Development Program (10047231) funded by MOTIE (Ministry of Trade, Industry & Energy) and KSRC (Korea Semiconductor Research Consortium); and by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (NRF-2018R1A2B2007525). Publisher Copyright: {\textcopyright} 2018 IOP Publishing Ltd.",

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AU - Pyeon, Jung Joon

AU - Cho, Cheol Jin

AU - Jeong, Doo Seok

AU - Kim, Jin Sang

AU - Kang, Chong Yun

AU - Kim, Seong Keun

N1 - Funding Information: This work was supported by the Future Semiconductor Device Technology Development Program (10047231) funded by MOTIE (Ministry of Trade, Industry & Energy) and KSRC (Korea Semiconductor Research Consortium); and by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (NRF-2018R1A2B2007525). Publisher Copyright: © 2018 IOP Publishing Ltd.

PY - 2018/9/14

Y1 - 2018/9/14

N2 - Rutile TiO2, a high temperature phase, has attracted interest as a capacitor dielectric in dynamic random-access memories (DRAMs). Despite its high dielectric constant of >80, large leakage currents caused by a low Schottky barrier height at the TiO2/electrode interface have hindered the use of rutile TiO2 as a commercial DRAM capacitor. Here, we propose a new Ru-Pt alloy electrode to increase the height of the Schottky barrier. The Ru-Pt mixed layer was grown by atomic layer deposition. The atomic ratio of Ru/Pt varied in the entire range from 100 at.% Ru to 100 at.% Pt. Rutile TiO2 films were inductively formed only on the Ru-Pt layer containing ≤43 at.% Pt, while anatase TiO2 films with a relatively low dielectric constant (∼40) were formed at Pt compositions > 63 at.%. The Ru-Pt (40-50 at.%) layer also attained an increase in work function of ∼0.3-0.4 eV, leading to an improvement in the leakage currents of the TiO2/Ru-Pt capacitor. These findings suggested that a Ru-Pt layer could serve as a promising electrode for next-generation DRAM capacitors.

AB - Rutile TiO2, a high temperature phase, has attracted interest as a capacitor dielectric in dynamic random-access memories (DRAMs). Despite its high dielectric constant of >80, large leakage currents caused by a low Schottky barrier height at the TiO2/electrode interface have hindered the use of rutile TiO2 as a commercial DRAM capacitor. Here, we propose a new Ru-Pt alloy electrode to increase the height of the Schottky barrier. The Ru-Pt mixed layer was grown by atomic layer deposition. The atomic ratio of Ru/Pt varied in the entire range from 100 at.% Ru to 100 at.% Pt. Rutile TiO2 films were inductively formed only on the Ru-Pt layer containing ≤43 at.% Pt, while anatase TiO2 films with a relatively low dielectric constant (∼40) were formed at Pt compositions > 63 at.%. The Ru-Pt (40-50 at.%) layer also attained an increase in work function of ∼0.3-0.4 eV, leading to an improvement in the leakage currents of the TiO2/Ru-Pt capacitor. These findings suggested that a Ru-Pt layer could serve as a promising electrode for next-generation DRAM capacitors.

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A Ru-Pt alloy electrode to suppress leakage currents of dynamic random-access memory capacitors

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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