A Ru-Pt alloy electrode to suppress leakage currents of dynamic random-access memory capacitors

Jung Joon Pyeon, Cheol Jin Cho, Doo Seok Jeong, Jin Sang Kim, Chong Yun Kang, Seong Keun Kim

    Research output: Contribution to journalArticlepeer-review

    6 Citations (Scopus)

    Abstract

    Rutile TiO2, a high temperature phase, has attracted interest as a capacitor dielectric in dynamic random-access memories (DRAMs). Despite its high dielectric constant of >80, large leakage currents caused by a low Schottky barrier height at the TiO2/electrode interface have hindered the use of rutile TiO2 as a commercial DRAM capacitor. Here, we propose a new Ru-Pt alloy electrode to increase the height of the Schottky barrier. The Ru-Pt mixed layer was grown by atomic layer deposition. The atomic ratio of Ru/Pt varied in the entire range from 100 at.% Ru to 100 at.% Pt. Rutile TiO2 films were inductively formed only on the Ru-Pt layer containing ≤43 at.% Pt, while anatase TiO2 films with a relatively low dielectric constant (∼40) were formed at Pt compositions > 63 at.%. The Ru-Pt (40-50 at.%) layer also attained an increase in work function of ∼0.3-0.4 eV, leading to an improvement in the leakage currents of the TiO2/Ru-Pt capacitor. These findings suggested that a Ru-Pt layer could serve as a promising electrode for next-generation DRAM capacitors.

    Original languageEnglish
    Article number455202
    JournalNanotechnology
    Volume29
    Issue number45
    DOIs
    Publication statusPublished - 2018 Sept 14

    Bibliographical note

    Funding Information:
    This work was supported by the Future Semiconductor Device Technology Development Program (10047231) funded by MOTIE (Ministry of Trade, Industry & Energy) and KSRC (Korea Semiconductor Research Consortium); and by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (NRF-2018R1A2B2007525).

    Publisher Copyright:
    © 2018 IOP Publishing Ltd.

    Keywords

    • DRAM
    • RuPt electrode
    • capacitor
    • rutile TiO2

    ASJC Scopus subject areas

    • Bioengineering
    • General Chemistry
    • General Materials Science
    • Mechanics of Materials
    • Mechanical Engineering
    • Electrical and Electronic Engineering

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