A short-channel TFT of amorphous In-Ga-Zn-O semiconductor pixel structure with advanced five-mask process

Joon Young Yang; Sung Hoon Jung; Chang Seung Woo; Ju Hyun Lee; Jung Ho Park; Myung Chul Jun; In Byeong Kang; Sang Deog Yeo

doi:10.1109/LED.2014.2349902

A short-channel TFT of amorphous In-Ga-Zn-O semiconductor pixel structure with advanced five-mask process

Joon Young Yang, Sung Hoon Jung, Chang Seung Woo, Ju Hyun Lee, Jung Ho Park, Myung Chul Jun, In Byeong Kang, Sang Deog Yeo

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We propose a new five-mask etch-stopper amorphous In-Ga-Zn-O semiconductor pixel structure for a high-resolution advanced-high-performance in-plane-switching (AH-IPS) display device. A short-channel length (under \(5~\mu \) m) thin-film transistor (TFT) was successfully fabricated using a self-aligned damage preventing layer. The linear field effect mobility of the 4- \(\mu \) m channel length TFT was 10.4 cm \(^{2}\) /V \(\cdot \) s. Using the proposed structure, we successfully fabricated a 9.7-in AH-IPS quad-extended graphics array liquid-crystal displays panel.

Original language	English
Article number	6895293
Pages (from-to)	1043-1045
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	35
Issue number	10
DOIs	https://doi.org/10.1109/LED.2014.2349902
Publication status	Published - 2014 Oct 1

Keywords

AMOLED
LCD
Short channel
a-IGZO
etch-stopper
oxide semiconductor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2014.2349902

Cite this

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title = "A short-channel TFT of amorphous In-Ga-Zn-O semiconductor pixel structure with advanced five-mask process",

abstract = "We propose a new five-mask etch-stopper amorphous In-Ga-Zn-O semiconductor pixel structure for a high-resolution advanced-high-performance in-plane-switching (AH-IPS) display device. A short-channel length (under \(5~\mu \) m) thin-film transistor (TFT) was successfully fabricated using a self-aligned damage preventing layer. The linear field effect mobility of the 4- \(\mu \) m channel length TFT was 10.4 cm \(^{2}\) /V \(\cdot \) s. Using the proposed structure, we successfully fabricated a 9.7-in AH-IPS quad-extended graphics array liquid-crystal displays panel.",

keywords = "AMOLED, LCD, Short channel, a-IGZO, etch-stopper, oxide semiconductor",

author = "Yang, {Joon Young} and Jung, {Sung Hoon} and Woo, {Chang Seung} and Lee, {Ju Hyun} and Park, {Jung Ho} and Jun, {Myung Chul} and Kang, {In Byeong} and Yeo, {Sang Deog}",

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AU - Jung, Sung Hoon

AU - Woo, Chang Seung

AU - Lee, Ju Hyun

AU - Park, Jung Ho

AU - Jun, Myung Chul

AU - Kang, In Byeong

AU - Yeo, Sang Deog

PY - 2014/10/1

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N2 - We propose a new five-mask etch-stopper amorphous In-Ga-Zn-O semiconductor pixel structure for a high-resolution advanced-high-performance in-plane-switching (AH-IPS) display device. A short-channel length (under \(5~\mu \) m) thin-film transistor (TFT) was successfully fabricated using a self-aligned damage preventing layer. The linear field effect mobility of the 4- \(\mu \) m channel length TFT was 10.4 cm \(^{2}\) /V \(\cdot \) s. Using the proposed structure, we successfully fabricated a 9.7-in AH-IPS quad-extended graphics array liquid-crystal displays panel.

AB - We propose a new five-mask etch-stopper amorphous In-Ga-Zn-O semiconductor pixel structure for a high-resolution advanced-high-performance in-plane-switching (AH-IPS) display device. A short-channel length (under \(5~\mu \) m) thin-film transistor (TFT) was successfully fabricated using a self-aligned damage preventing layer. The linear field effect mobility of the 4- \(\mu \) m channel length TFT was 10.4 cm \(^{2}\) /V \(\cdot \) s. Using the proposed structure, we successfully fabricated a 9.7-in AH-IPS quad-extended graphics array liquid-crystal displays panel.

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KW - LCD

KW - Short channel

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KW - oxide semiconductor

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A short-channel TFT of amorphous In-Ga-Zn-O semiconductor pixel structure with advanced five-mask process

Abstract

Keywords

ASJC Scopus subject areas

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