Abstract
We propose a new five-mask etch-stopper amorphous In-Ga-Zn-O semiconductor pixel structure for a high-resolution advanced-high-performance in-plane-switching (AH-IPS) display device. A short-channel length (under \(5~\mu \) m) thin-film transistor (TFT) was successfully fabricated using a self-aligned damage preventing layer. The linear field effect mobility of the 4- \(\mu \) m channel length TFT was 10.4 cm \(^{2}\) /V \(\cdot \) s. Using the proposed structure, we successfully fabricated a 9.7-in AH-IPS quad-extended graphics array liquid-crystal displays panel.
Original language | English |
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Article number | 6895293 |
Pages (from-to) | 1043-1045 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 35 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2014 Oct 1 |
Keywords
- AMOLED
- LCD
- Short channel
- a-IGZO
- etch-stopper
- oxide semiconductor
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering