@inproceedings{f69498e8a1954049a2e5bc3328a603f9,
title = "A small sized lateral trench electrode IGBT having improved latch-up and breakdown characteristics for power electronics",
abstract = "A new small sized Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) was proposed to improve characteristics of the conventional Lateral IGBT (LIGBT) and Lateral Trench gate IGBT (LTIGBT). The entire Electrode of LTEIGBT was replaced with trench-type electrode. The LTEIGBT was designed so that the width of device was 19μm. Latch-up current densities of the proposed LTEIGBT increased 10 and 2.3 times more than those of the conventional LIGBT and LTIGBT. Forward blocking voltage of the LTEIGBT was 130V. Conventional LIGBT and LTIGBT of the same size were 60V and 100V, respectively. Because the proposed LTEIGBT was constructed of trench-type electrodes, the electric field moved toward the trench-oxide layer and punch-through breakdown occurred, lately.",
keywords = "Forward blocking voltage, Latch-up, Power integrated circuits, Power transistor, Trench Electrode",
author = "Kang, {Ey Goo} and Moon, {Seung Hyun} and Sung, {Man Yong}",
year = "2001",
language = "English",
isbn = "0780371011",
series = "IEEE Region 10 International Conference on Electrical and Electronic Technology",
pages = "473--479",
editor = "D. Tien and Y.C. Liang and D. Tien and Y.C. Liang",
booktitle = "IEEE Region 10 International Conference on Electrical and Electronic Technology",
note = "IEEE Region 10 International Conference on Electrical and Electronic Technology ; Conference date: 19-08-2001 Through 22-08-2001",
}