A small sized Lateral Trench Electrode Power MOS for smart power IC system

In this paper, first, a new small-size Lateral Trench-Electrode Power MOS is proposed. This new structure, called LTEMOS (Lateral Trench Electrode Power MOS), is based on that of the conventional lateral power MOS. The entire electrode of LTEMOS is placed in trench oxide. The forward blocking voltage of the proposed LTEMOS is improved by 1.6 times, compared with that of the conventional power MOS. The forward blocking voltage of LTEMOS is about 250 V. At the same size, an improvement of the forward blocking voltage of about 1.6 times relative to the conventional MOS is observed by using TMA-MEDICI which is used for analyzing the device's electrical characteristics. Because all of the electrodes of the proposed device are formed in trench oxide, the electric fields in the device are crowded into trench oxide. Second, after the modification of the source region width from the proposed LTEMOS, we verified its electrical characteristics. Third, we improved the forward blocking voltage by using local doping in the proposed LTEMOS. Its forward blocking voltage is about 500 V. We observed that the electrical characteristics of the proposed device were improved by using TMA-MEDICI.