A SPICE model of silicon tunneling field-effect transistors

Sola Woo; Minsuk Kim; Sangsig Kim

doi:10.1016/j.mee.2018.01.028

A SPICE model of silicon tunneling field-effect transistors

Sola Woo, Minsuk Kim, Sangsig Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In this study, we propose a precise model of silicon tunneling field-effect transistors (TFETs) by modifying the Kane-Sze tunneling formula. In our model, a reference device is calibrated by utilizing TCAD and SPICE simulation. Electrical parameters extracted in our TCAD simulation are applied to a SPICE model not only for adopting the off-state current of a p-i-n diode under a reverse bias state but also for developing the threshold voltage and electric field equations. Furthermore, a basic complementary TFET inverter is simulated to demonstrate the capabilities of our proposed model.

Original language	English
Pages (from-to)	66-71
Number of pages	6
Journal	Microelectronic Engineering
Volume	191
DOIs	https://doi.org/10.1016/j.mee.2018.01.028
Publication status	Published - 2018 May 5

Keywords

Calibration
Device modeling
SPICE model
TCAD simulation
Tunnel FET

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.mee.2018.01.028

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title = "A SPICE model of silicon tunneling field-effect transistors",

abstract = "In this study, we propose a precise model of silicon tunneling field-effect transistors (TFETs) by modifying the Kane-Sze tunneling formula. In our model, a reference device is calibrated by utilizing TCAD and SPICE simulation. Electrical parameters extracted in our TCAD simulation are applied to a SPICE model not only for adopting the off-state current of a p-i-n diode under a reverse bias state but also for developing the threshold voltage and electric field equations. Furthermore, a basic complementary TFET inverter is simulated to demonstrate the capabilities of our proposed model.",

keywords = "Calibration, Device modeling, SPICE model, TCAD simulation, Tunnel FET",

author = "Sola Woo and Minsuk Kim and Sangsig Kim",

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AU - Woo, Sola

AU - Kim, Minsuk

AU - Kim, Sangsig

N1 - Funding Information: This work was partly supported by the National Research Foundation of Korea (NRF) Grant funded by the Korean Government (MSIP) ( NRF-2013R1A2A1A03070750 , NRF-2015R1A2A1A15055437 ), the Brain Korea 21 Plus Project in 2017, and Samsung Electronics . Publisher Copyright: © 2018

PY - 2018/5/5

Y1 - 2018/5/5

N2 - In this study, we propose a precise model of silicon tunneling field-effect transistors (TFETs) by modifying the Kane-Sze tunneling formula. In our model, a reference device is calibrated by utilizing TCAD and SPICE simulation. Electrical parameters extracted in our TCAD simulation are applied to a SPICE model not only for adopting the off-state current of a p-i-n diode under a reverse bias state but also for developing the threshold voltage and electric field equations. Furthermore, a basic complementary TFET inverter is simulated to demonstrate the capabilities of our proposed model.

AB - In this study, we propose a precise model of silicon tunneling field-effect transistors (TFETs) by modifying the Kane-Sze tunneling formula. In our model, a reference device is calibrated by utilizing TCAD and SPICE simulation. Electrical parameters extracted in our TCAD simulation are applied to a SPICE model not only for adopting the off-state current of a p-i-n diode under a reverse bias state but also for developing the threshold voltage and electric field equations. Furthermore, a basic complementary TFET inverter is simulated to demonstrate the capabilities of our proposed model.

KW - Calibration

KW - Device modeling

KW - SPICE model

KW - TCAD simulation

KW - Tunnel FET

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DO - 10.1016/j.mee.2018.01.028

M3 - Article

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SN - 0167-9317

VL - 191

SP - 66

EP - 71

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

A SPICE model of silicon tunneling field-effect transistors

Abstract

Keywords

ASJC Scopus subject areas

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