A spin field effect transistor using stray magnetic fields

Hyun Cheol Koo, Jonghwa Eom, Joonyeon Chang, Suk Hee Han

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


A spin field effect transistor (spin-FET) using the stray magnetic field induced by ferromagnetic patterns is suggested. Spin polarized electrons are generated by the Zeeman splitting effect at source and selected spins are transmitted by the spin filtering effect at drain. Datta and Das spin transistor needs spin injection and detection in a ferromagnet-semiconductor hybrid junction. This new design has an advantage over the previous spin-FET concept by removing the current flowing at an interface between ferromagnetic metal and semiconductor channel.

Original languageEnglish
Pages (from-to)1016-1019
Number of pages4
JournalSolid-State Electronics
Issue number9
Publication statusPublished - 2009 Sept
Externally publishedYes


  • 2DEG
  • Spin filtering
  • Spin-FET
  • Stray field
  • Zeeman splitting

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


Dive into the research topics of 'A spin field effect transistor using stray magnetic fields'. Together they form a unique fingerprint.

Cite this