A spin field effect transistor using stray magnetic fields

Hyun Cheol Koo; Jonghwa Eom; Joonyeon Chang; Suk Hee Han

doi:10.1016/j.sse.2009.06.006

A spin field effect transistor using stray magnetic fields

Hyun Cheol Koo, Jonghwa Eom, Joonyeon Chang, Suk Hee Han

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

A spin field effect transistor (spin-FET) using the stray magnetic field induced by ferromagnetic patterns is suggested. Spin polarized electrons are generated by the Zeeman splitting effect at source and selected spins are transmitted by the spin filtering effect at drain. Datta and Das spin transistor needs spin injection and detection in a ferromagnet-semiconductor hybrid junction. This new design has an advantage over the previous spin-FET concept by removing the current flowing at an interface between ferromagnetic metal and semiconductor channel.

Original language	English
Pages (from-to)	1016-1019
Number of pages	4
Journal	Solid-State Electronics
Volume	53
Issue number	9
DOIs	https://doi.org/10.1016/j.sse.2009.06.006
Publication status	Published - 2009 Sept
Externally published	Yes

Bibliographical note

Funding Information:
This work was supported by the KIST Institutional Program.

Copyright:
Copyright 2009 Elsevier B.V., All rights reserved.

Keywords

2DEG
Spin filtering
Spin-FET
Stray field
Zeeman splitting

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2009.06.006

Cite this

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abstract = "A spin field effect transistor (spin-FET) using the stray magnetic field induced by ferromagnetic patterns is suggested. Spin polarized electrons are generated by the Zeeman splitting effect at source and selected spins are transmitted by the spin filtering effect at drain. Datta and Das spin transistor needs spin injection and detection in a ferromagnet-semiconductor hybrid junction. This new design has an advantage over the previous spin-FET concept by removing the current flowing at an interface between ferromagnetic metal and semiconductor channel.",

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author = "Koo, {Hyun Cheol} and Jonghwa Eom and Joonyeon Chang and Han, {Suk Hee}",

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AU - Koo, Hyun Cheol

AU - Eom, Jonghwa

AU - Chang, Joonyeon

AU - Han, Suk Hee

PY - 2009/9

Y1 - 2009/9

N2 - A spin field effect transistor (spin-FET) using the stray magnetic field induced by ferromagnetic patterns is suggested. Spin polarized electrons are generated by the Zeeman splitting effect at source and selected spins are transmitted by the spin filtering effect at drain. Datta and Das spin transistor needs spin injection and detection in a ferromagnet-semiconductor hybrid junction. This new design has an advantage over the previous spin-FET concept by removing the current flowing at an interface between ferromagnetic metal and semiconductor channel.

AB - A spin field effect transistor (spin-FET) using the stray magnetic field induced by ferromagnetic patterns is suggested. Spin polarized electrons are generated by the Zeeman splitting effect at source and selected spins are transmitted by the spin filtering effect at drain. Datta and Das spin transistor needs spin injection and detection in a ferromagnet-semiconductor hybrid junction. This new design has an advantage over the previous spin-FET concept by removing the current flowing at an interface between ferromagnetic metal and semiconductor channel.

KW - 2DEG

KW - Spin filtering

KW - Spin-FET

KW - Stray field

KW - Zeeman splitting

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JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 9

ER -

A spin field effect transistor using stray magnetic fields

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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