Abstract
The relationship between aluminum fire-through and the properties of a-SiNx:H thin films was investigated to aid their use as dielectric layers in rear side and front passivation layers in crystalline solar cells. Aluminum fire-through was shown to depend on the refractive index and the deposition rate of the films. Refractive index, density and deposition rate increased with increasing SiH4/NH3 ratio, while the etching rate decreased. Aluminum fire-through occurred in a sample of refractive index 2.0 during fast deposition but not when the deposition rate was slow. Aluminum fire-through occurred during extended firing, despite it not occurring during normal firing by RTP. The results of this work demonstrate that refractive index was the major determinant of aluminum fire-through, and that the aluminum and the a-SiNx:H thin film reacted immediately at the beginning of firing at a rate determined by the deposition rate.
Original language | English |
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Pages (from-to) | 313-318 |
Number of pages | 6 |
Journal | Current Applied Physics |
Volume | 12 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2012 Jan |
Bibliographical note
Funding Information:This work was supported by a Human Resources Development grant from the Korea Institute of Energy Technology Evaluation and Planning (KETEP) funded by the Ministry of Knowledge Economy, Republic of Korea (No. 20104010100640 ), and this work was supported by the New & Renewable Energy of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea government Ministry of Knowledge Economy (No. 20093021010010 ).
Keywords
- Aluminum
- Back surface field
- Local contact
- Rear passivation
- Silicon nitride
- Solar cell
ASJC Scopus subject areas
- General Materials Science
- General Physics and Astronomy