A study on the design and electrical characteristics enhancement of the floating island IGBT with low on-resistance

Eun Sik Jung; Yu Seup Cho; Ey Goo Kang; Yong Tae Kim; Man Young Sung

doi:10.5370/JEET.2012.7.4.601

A study on the design and electrical characteristics enhancement of the floating island IGBT with low on-resistance

Eun Sik Jung, Yu Seup Cho, Ey Goo Kang, Yong Tae Kim, Man Young Sung

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Insulated Gate Bipolar Transistors(IGBTs) have received wide attention because of their high current conduction and good switching characteristics. To reduce the power loss of IGBT, the onstate voltage drop should be lowered and the switching time should be shortened. However, there is trade-off between the breakdown voltage and the on-state voltage drop. The FLoatingIsland(FLI) structure can lower the on-state voltage drop without reducing breakdown voltage. In this paper, The FLI IGBT shows an on-state voltage drop that is 22.5% lower than the conventional IGBT, even though the breakdown voltages of each IGBT are almost identical.

Original language	English
Pages (from-to)	601-605
Number of pages	5
Journal	Journal of Electrical Engineering and Technology
Volume	7
Issue number	4
DOIs	https://doi.org/10.5370/JEET.2012.7.4.601
Publication status	Published - 2012 Jul

Keywords

Breakdown voltage
Floating island
IGBTS
On-resistance
Power device

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.5370/JEET.2012.7.4.601

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@article{c7352e8bf7454ae999ae196a8bc721a5,

title = "A study on the design and electrical characteristics enhancement of the floating island IGBT with low on-resistance",

abstract = "Insulated Gate Bipolar Transistors(IGBTs) have received wide attention because of their high current conduction and good switching characteristics. To reduce the power loss of IGBT, the onstate voltage drop should be lowered and the switching time should be shortened. However, there is trade-off between the breakdown voltage and the on-state voltage drop. The FLoatingIsland(FLI) structure can lower the on-state voltage drop without reducing breakdown voltage. In this paper, The FLI IGBT shows an on-state voltage drop that is 22.5% lower than the conventional IGBT, even though the breakdown voltages of each IGBT are almost identical.",

keywords = "Breakdown voltage, Floating island, IGBTS, On-resistance, Power device",

author = "Jung, {Eun Sik} and Cho, {Yu Seup} and Kang, {Ey Goo} and Kim, {Yong Tae} and Sung, {Man Young}",

year = "2012",

month = jul,

doi = "10.5370/JEET.2012.7.4.601",

language = "English",

volume = "7",

pages = "601--605",

journal = "Journal of Electrical Engineering and Technology",

issn = "1975-0102",

publisher = "Korean Institute of Electrical Engineers",

number = "4",

}

TY - JOUR

T1 - A study on the design and electrical characteristics enhancement of the floating island IGBT with low on-resistance

AU - Jung, Eun Sik

AU - Cho, Yu Seup

AU - Kang, Ey Goo

AU - Kim, Yong Tae

AU - Sung, Man Young

PY - 2012/7

Y1 - 2012/7

N2 - Insulated Gate Bipolar Transistors(IGBTs) have received wide attention because of their high current conduction and good switching characteristics. To reduce the power loss of IGBT, the onstate voltage drop should be lowered and the switching time should be shortened. However, there is trade-off between the breakdown voltage and the on-state voltage drop. The FLoatingIsland(FLI) structure can lower the on-state voltage drop without reducing breakdown voltage. In this paper, The FLI IGBT shows an on-state voltage drop that is 22.5% lower than the conventional IGBT, even though the breakdown voltages of each IGBT are almost identical.

AB - Insulated Gate Bipolar Transistors(IGBTs) have received wide attention because of their high current conduction and good switching characteristics. To reduce the power loss of IGBT, the onstate voltage drop should be lowered and the switching time should be shortened. However, there is trade-off between the breakdown voltage and the on-state voltage drop. The FLoatingIsland(FLI) structure can lower the on-state voltage drop without reducing breakdown voltage. In this paper, The FLI IGBT shows an on-state voltage drop that is 22.5% lower than the conventional IGBT, even though the breakdown voltages of each IGBT are almost identical.

KW - Breakdown voltage

KW - Floating island

KW - IGBTS

KW - On-resistance

KW - Power device

UR - http://www.scopus.com/inward/record.url?scp=84863431975&partnerID=8YFLogxK

U2 - 10.5370/JEET.2012.7.4.601

DO - 10.5370/JEET.2012.7.4.601

M3 - Article

AN - SCOPUS:84863431975

SN - 1975-0102

VL - 7

SP - 601

EP - 605

JO - Journal of Electrical Engineering and Technology

JF - Journal of Electrical Engineering and Technology

IS - 4

ER -

A study on the design and electrical characteristics enhancement of the floating island IGBT with low on-resistance

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Keywords

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