A study on the scalability of a selector device using threshold switching in Pt/GeSe/Pt

Hyung Woo Ahn; Doo Seok Jeong; Byung Ki Cheong; Su Dong Kim; Sang Yeol Shin; Hyungkwang Lim; Donghwan Kim; Suyoun Lee

doi:10.1149/2.011309ssl

A study on the scalability of a selector device using threshold switching in Pt/GeSe/Pt

Hyung Woo Ahn, Doo Seok Jeong, Byung Ki Cheong, Su Dong Kim, Sang Yeol Shin, Hyungkwang Lim, Donghwan Kim, Suyoun Lee

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

We performed a study on the scalability of Ovonic Threshold Switching (OTS) devices using an amorphous chalcogenide material, Ge0.4Se0.6. As the cell size decreased, the maximum driving current was estimated to be over 3 × 107 A/cm2, surpassing the state of the art devices based on crystalline Si. However, the threshold voltage (VTH), the holding voltage (VH), and the holding current (IH) were observed to increase laying challenges to be resolved for developing non-destructive and low-power consuming selector devices. VTH was found to be reduced by decreasing the thickness of GeSe film until 40 nm, below which it started to saturate. This might be associated with the Schottky barrier formed at the interface between the amorphous semiconductor and the metal electrode.

Original language	English
Pages (from-to)	N31-N33
Journal	ECS Solid State Letters
Volume	2
Issue number	9
DOIs	https://doi.org/10.1149/2.011309ssl
Publication status	Published - 2013

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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abstract = "We performed a study on the scalability of Ovonic Threshold Switching (OTS) devices using an amorphous chalcogenide material, Ge0.4Se0.6. As the cell size decreased, the maximum driving current was estimated to be over 3 × 107 A/cm2, surpassing the state of the art devices based on crystalline Si. However, the threshold voltage (VTH), the holding voltage (VH), and the holding current (IH) were observed to increase laying challenges to be resolved for developing non-destructive and low-power consuming selector devices. VTH was found to be reduced by decreasing the thickness of GeSe film until 40 nm, below which it started to saturate. This might be associated with the Schottky barrier formed at the interface between the amorphous semiconductor and the metal electrode.",

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T1 - A study on the scalability of a selector device using threshold switching in Pt/GeSe/Pt

AU - Ahn, Hyung Woo

AU - Jeong, Doo Seok

AU - Cheong, Byung Ki

AU - Kim, Su Dong

AU - Shin, Sang Yeol

AU - Lim, Hyungkwang

AU - Kim, Donghwan

AU - Lee, Suyoun

PY - 2013

Y1 - 2013

N2 - We performed a study on the scalability of Ovonic Threshold Switching (OTS) devices using an amorphous chalcogenide material, Ge0.4Se0.6. As the cell size decreased, the maximum driving current was estimated to be over 3 × 107 A/cm2, surpassing the state of the art devices based on crystalline Si. However, the threshold voltage (VTH), the holding voltage (VH), and the holding current (IH) were observed to increase laying challenges to be resolved for developing non-destructive and low-power consuming selector devices. VTH was found to be reduced by decreasing the thickness of GeSe film until 40 nm, below which it started to saturate. This might be associated with the Schottky barrier formed at the interface between the amorphous semiconductor and the metal electrode.

AB - We performed a study on the scalability of Ovonic Threshold Switching (OTS) devices using an amorphous chalcogenide material, Ge0.4Se0.6. As the cell size decreased, the maximum driving current was estimated to be over 3 × 107 A/cm2, surpassing the state of the art devices based on crystalline Si. However, the threshold voltage (VTH), the holding voltage (VH), and the holding current (IH) were observed to increase laying challenges to be resolved for developing non-destructive and low-power consuming selector devices. VTH was found to be reduced by decreasing the thickness of GeSe film until 40 nm, below which it started to saturate. This might be associated with the Schottky barrier formed at the interface between the amorphous semiconductor and the metal electrode.

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A study on the scalability of a selector device using threshold switching in Pt/GeSe/Pt

Abstract

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