A sub 1V CMOS bandgap reference with two diodes

Hyung Jin Choi; Jeong Cho; Soo Won Kim

doi:10.1051/matecconf/20165412004

A sub 1V CMOS bandgap reference with two diodes

Hyung Jin Choi, Jeong Cho, Soo Won Kim

* Honorary professors

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

A small size, sub 1V CMOS bandgap voltage reference with the temperature coefficient (TC) of 12ppm/°C from 0°C to 100°C is presented in this paper. The proposed circuit offers several performance advantages over previous bandgap voltage reference circuits. Compared to a conventional structure, it achieves a smaller area by using only two diodes. Also, it can fulfil sub 1V reference voltage by using temperature coefficient of threshold voltage to generate a current proportional to absolute temperature. This is because TC of this current on proposed circuit is bigger than that of conventional structure. Detailed analysis of the proposed bandgap reference is provided, which is simulated using 0.35μm CMOS process. The proposed bandgap reference occupies an active area of 0.0067mm². The simulation results are the voltage reference output voltage of 0.843V and an accuracy of ±0.08%.

Original language	English
Article number	12004
Journal	MATEC Web of Conferences
Volume	54
DOIs	https://doi.org/10.1051/matecconf/20165412004
Publication status	Published - 2016 Apr 22
Event	2016 7th International Conference on Mechanical, Industrial, and Manufacturing Technologies, MIMT 2016 - Cape Town, South Africa Duration: 2016 Feb 1 → 2016 Feb 3

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)
Engineering(all)

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10.1051/matecconf/20165412004

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title = "A sub 1V CMOS bandgap reference with two diodes",

abstract = "A small size, sub 1V CMOS bandgap voltage reference with the temperature coefficient (TC) of 12ppm/°C from 0°C to 100°C is presented in this paper. The proposed circuit offers several performance advantages over previous bandgap voltage reference circuits. Compared to a conventional structure, it achieves a smaller area by using only two diodes. Also, it can fulfil sub 1V reference voltage by using temperature coefficient of threshold voltage to generate a current proportional to absolute temperature. This is because TC of this current on proposed circuit is bigger than that of conventional structure. Detailed analysis of the proposed bandgap reference is provided, which is simulated using 0.35μm CMOS process. The proposed bandgap reference occupies an active area of 0.0067mm2. The simulation results are the voltage reference output voltage of 0.843V and an accuracy of ±0.08%.",

author = "Choi, {Hyung Jin} and Jeong Cho and Kim, {Soo Won}",

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T1 - A sub 1V CMOS bandgap reference with two diodes

AU - Choi, Hyung Jin

AU - Cho, Jeong

AU - Kim, Soo Won

N1 - Publisher Copyright: © The Authors, published by EDP Sciences.

PY - 2016/4/22

Y1 - 2016/4/22

N2 - A small size, sub 1V CMOS bandgap voltage reference with the temperature coefficient (TC) of 12ppm/°C from 0°C to 100°C is presented in this paper. The proposed circuit offers several performance advantages over previous bandgap voltage reference circuits. Compared to a conventional structure, it achieves a smaller area by using only two diodes. Also, it can fulfil sub 1V reference voltage by using temperature coefficient of threshold voltage to generate a current proportional to absolute temperature. This is because TC of this current on proposed circuit is bigger than that of conventional structure. Detailed analysis of the proposed bandgap reference is provided, which is simulated using 0.35μm CMOS process. The proposed bandgap reference occupies an active area of 0.0067mm2. The simulation results are the voltage reference output voltage of 0.843V and an accuracy of ±0.08%.

AB - A small size, sub 1V CMOS bandgap voltage reference with the temperature coefficient (TC) of 12ppm/°C from 0°C to 100°C is presented in this paper. The proposed circuit offers several performance advantages over previous bandgap voltage reference circuits. Compared to a conventional structure, it achieves a smaller area by using only two diodes. Also, it can fulfil sub 1V reference voltage by using temperature coefficient of threshold voltage to generate a current proportional to absolute temperature. This is because TC of this current on proposed circuit is bigger than that of conventional structure. Detailed analysis of the proposed bandgap reference is provided, which is simulated using 0.35μm CMOS process. The proposed bandgap reference occupies an active area of 0.0067mm2. The simulation results are the voltage reference output voltage of 0.843V and an accuracy of ±0.08%.

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VL - 54

JO - MATEC Web of Conferences

JF - MATEC Web of Conferences

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T2 - 2016 7th International Conference on Mechanical, Industrial, and Manufacturing Technologies, MIMT 2016

Y2 - 1 February 2016 through 3 February 2016

ER -

A sub 1V CMOS bandgap reference with two diodes

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