A sub 1V CMOS bandgap reference with two diodes

Hyung Jin Choi; Jeong Cho; Soo Won Kim

doi:10.1051/matecconf/20165412004

A sub 1V CMOS bandgap reference with two diodes

Hyung Jin Choi
, Jeong Cho
, Soo Won Kim

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

A small size, sub 1V CMOS bandgap voltage reference with the temperature coefficient (TC) of 12ppm/°C from 0°C to 100°C is presented in this paper. The proposed circuit offers several performance advantages over previous bandgap voltage reference circuits. Compared to a conventional structure, it achieves a smaller area by using only two diodes. Also, it can fulfil sub 1V reference voltage by using temperature coefficient of threshold voltage to generate a current proportional to absolute temperature. This is because TC of this current on proposed circuit is bigger than that of conventional structure. Detailed analysis of the proposed bandgap reference is provided, which is simulated using 0.35μm CMOS process. The proposed bandgap reference occupies an active area of 0.0067mm². The simulation results are the voltage reference output voltage of 0.843V and an accuracy of ±0.08%.

Original language	English
Article number	12004
Journal	MATEC Web of Conferences
Volume	54
DOIs	https://doi.org/10.1051/matecconf/20165412004
Publication status	Published - 2016 Apr 22
Event	2016 7th International Conference on Mechanical, Industrial, and Manufacturing Technologies, MIMT 2016 - Cape Town, South Africa Duration: 2016 Feb 1 → 2016 Feb 3

Bibliographical note

Publisher Copyright:
© The Authors, published by EDP Sciences.

ASJC Scopus subject areas

General Chemistry
General Materials Science
General Engineering

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10.1051/matecconf/20165412004

Cite this

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title = "A sub 1V CMOS bandgap reference with two diodes",

abstract = "A small size, sub 1V CMOS bandgap voltage reference with the temperature coefficient (TC) of 12ppm/°C from 0°C to 100°C is presented in this paper. The proposed circuit offers several performance advantages over previous bandgap voltage reference circuits. Compared to a conventional structure, it achieves a smaller area by using only two diodes. Also, it can fulfil sub 1V reference voltage by using temperature coefficient of threshold voltage to generate a current proportional to absolute temperature. This is because TC of this current on proposed circuit is bigger than that of conventional structure. Detailed analysis of the proposed bandgap reference is provided, which is simulated using 0.35μm CMOS process. The proposed bandgap reference occupies an active area of 0.0067mm2. The simulation results are the voltage reference output voltage of 0.843V and an accuracy of ±0.08\%.",

author = "Choi, \{Hyung Jin\} and Jeong Cho and Kim, \{Soo Won\}",

note = "Publisher Copyright: {\textcopyright} The Authors, published by EDP Sciences.; 2016 7th International Conference on Mechanical, Industrial, and Manufacturing Technologies, MIMT 2016 ; Conference date: 01-02-2016 Through 03-02-2016",

year = "2016",

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doi = "10.1051/matecconf/20165412004",

language = "English",

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journal = "MATEC Web of Conferences",

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TY - JOUR

T1 - A sub 1V CMOS bandgap reference with two diodes

AU - Choi, Hyung Jin

AU - Cho, Jeong

AU - Kim, Soo Won

PY - 2016/4/22

Y1 - 2016/4/22

N2 - A small size, sub 1V CMOS bandgap voltage reference with the temperature coefficient (TC) of 12ppm/°C from 0°C to 100°C is presented in this paper. The proposed circuit offers several performance advantages over previous bandgap voltage reference circuits. Compared to a conventional structure, it achieves a smaller area by using only two diodes. Also, it can fulfil sub 1V reference voltage by using temperature coefficient of threshold voltage to generate a current proportional to absolute temperature. This is because TC of this current on proposed circuit is bigger than that of conventional structure. Detailed analysis of the proposed bandgap reference is provided, which is simulated using 0.35μm CMOS process. The proposed bandgap reference occupies an active area of 0.0067mm2. The simulation results are the voltage reference output voltage of 0.843V and an accuracy of ±0.08%.

AB - A small size, sub 1V CMOS bandgap voltage reference with the temperature coefficient (TC) of 12ppm/°C from 0°C to 100°C is presented in this paper. The proposed circuit offers several performance advantages over previous bandgap voltage reference circuits. Compared to a conventional structure, it achieves a smaller area by using only two diodes. Also, it can fulfil sub 1V reference voltage by using temperature coefficient of threshold voltage to generate a current proportional to absolute temperature. This is because TC of this current on proposed circuit is bigger than that of conventional structure. Detailed analysis of the proposed bandgap reference is provided, which is simulated using 0.35μm CMOS process. The proposed bandgap reference occupies an active area of 0.0067mm2. The simulation results are the voltage reference output voltage of 0.843V and an accuracy of ±0.08%.

UR - https://www.scopus.com/pages/publications/84992375344

U2 - 10.1051/matecconf/20165412004

DO - 10.1051/matecconf/20165412004

M3 - Conference article

AN - SCOPUS:84992375344

SN - 2261-236X

VL - 54

JO - MATEC Web of Conferences

JF - MATEC Web of Conferences

M1 - 12004

T2 - 2016 7th International Conference on Mechanical, Industrial, and Manufacturing Technologies, MIMT 2016

Y2 - 1 February 2016 through 3 February 2016

ER -

A sub 1V CMOS bandgap reference with two diodes

Abstract

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