A thermodynamic model for the growth of buried oxide layers by thermal oxidation

E. Schroer; S. Hopfe; J. Y. Huh; U. Gösele

doi:10.1016/0921-5107(95)01288-5

A thermodynamic model for the growth of buried oxide layers by thermal oxidation

E. Schroer, S. Hopfe, J. Y. Huh, U. Gösele

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

A thermodynamic model is derived which describes the growth kinetics of the Buried Oxide (BOX) layer in Silicon On Insulator (SOI) structures due to the oxidation of the superficial silicon layer. The model is based on the assumptions that this oxidation induces a supersaturation of interstitial oxygen in the superficial silicon layer and that this supersaturation is proportional to the growth rate of the external thermal oxide. We compare the model with the two data sets available and discuss the discrepancies in terms of different supersaturations in the superficial silicon layer induced by thermal oxidation.

Original language	English
Pages (from-to)	237-240
Number of pages	4
Journal	Materials Science and Engineering B
Volume	36
Issue number	1-3
DOIs	https://doi.org/10.1016/0921-5107(95)01288-5
Publication status	Published - 1996 Jan
Externally published	Yes

Keywords

Diffusion
Kinetics
Silicon
Thermodynamic

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/0921-5107(95)01288-5

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abstract = "A thermodynamic model is derived which describes the growth kinetics of the Buried Oxide (BOX) layer in Silicon On Insulator (SOI) structures due to the oxidation of the superficial silicon layer. The model is based on the assumptions that this oxidation induces a supersaturation of interstitial oxygen in the superficial silicon layer and that this supersaturation is proportional to the growth rate of the external thermal oxide. We compare the model with the two data sets available and discuss the discrepancies in terms of different supersaturations in the superficial silicon layer induced by thermal oxidation.",

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author = "E. Schroer and S. Hopfe and Huh, {J. Y.} and U. G{\"o}sele",

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T1 - A thermodynamic model for the growth of buried oxide layers by thermal oxidation

AU - Schroer, E.

AU - Hopfe, S.

AU - Huh, J. Y.

AU - Gösele, U.

PY - 1996/1

Y1 - 1996/1

N2 - A thermodynamic model is derived which describes the growth kinetics of the Buried Oxide (BOX) layer in Silicon On Insulator (SOI) structures due to the oxidation of the superficial silicon layer. The model is based on the assumptions that this oxidation induces a supersaturation of interstitial oxygen in the superficial silicon layer and that this supersaturation is proportional to the growth rate of the external thermal oxide. We compare the model with the two data sets available and discuss the discrepancies in terms of different supersaturations in the superficial silicon layer induced by thermal oxidation.

AB - A thermodynamic model is derived which describes the growth kinetics of the Buried Oxide (BOX) layer in Silicon On Insulator (SOI) structures due to the oxidation of the superficial silicon layer. The model is based on the assumptions that this oxidation induces a supersaturation of interstitial oxygen in the superficial silicon layer and that this supersaturation is proportional to the growth rate of the external thermal oxide. We compare the model with the two data sets available and discuss the discrepancies in terms of different supersaturations in the superficial silicon layer induced by thermal oxidation.

KW - Diffusion

KW - Kinetics

KW - Silicon

KW - Thermodynamic

UR - http://www.scopus.com/inward/record.url?scp=0029676241&partnerID=8YFLogxK

U2 - 10.1016/0921-5107(95)01288-5

DO - 10.1016/0921-5107(95)01288-5

M3 - Article

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SN - 0921-5107

VL - 36

SP - 237

EP - 240

JO - Materials Science and Engineering B

JF - Materials Science and Engineering B

IS - 1-3

ER -

A thermodynamic model for the growth of buried oxide layers by thermal oxidation

Abstract

Keywords

ASJC Scopus subject areas

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