A to-watt x-band grid oscillator

J. B. Hacker; M. P. De Lisio; Moonil Kim; Cheh Ming Liu; Sri Jie Li; S. W. Wedge; D. B. Rutledge

doi:10.1109/9780470544068.ch3

A to-watt x-band grid oscillator

J. B. Hacker, M. P. De Lisio, Moonil Kim, Cheh Ming Liu, Sri Jie Li, S. W. Wedge, D. B. Rutledge

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

A 100.transistor MESFET grid oseillator haa been labricated that generates an effective radiated power of 660W at 9.8 GH. and has a directivity of 18.0 dB. This corresponds to a total radiated power of 10.3W, or 103mW per device. This is the largest recorded output power for a grid oscillator. The grid drain-source bias voltage is 1.4V and the total drain current for the grid is 6.0 A, resulting in an overall dc-to-rf efficiency of 23%. The pattern of the 55B noise-ta-carrier ratio Was measured and found to be essentially independent of the radiation angle. The average 5SB noise level Was -81 dBc/H. at an offset of 150 kH. from the carrier. An average improvement in the SSB noise-eo-carrier ratio of 5 dB was measured for a 100-transistor grid compared to a l6.transutor grid.

Original language	English
Title of host publication	Active Antennas and Quasi-Optical Arrays
Publisher	John Wiley and Sons Inc.
Pages	94-97
Number of pages	4
ISBN (Electronic)	9780470544068
ISBN (Print)	0780334868, 9780780334861
DOIs	https://doi.org/10.1109/9780470544068.ch3
Publication status	Published - 2009 Jan 1
Externally published	Yes

Keywords

Computer architecture
Equivalent circuits
Injection-locked oscillators
Logic gates
Microprocessors
Mirrors

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

Access to Document

10.1109/9780470544068.ch3

Cite this

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abstract = "A 100.transistor MESFET grid oseillator haa been labricated that generates an effective radiated power of 660W at 9.8 GH. and has a directivity of 18.0 dB. This corresponds to a total radiated power of 10.3W, or 103mW per device. This is the largest recorded output power for a grid oscillator. The grid drain-source bias voltage is 1.4V and the total drain current for the grid is 6.0 A, resulting in an overall dc-to-rf efficiency of 23%. The pattern of the 55B noise-ta-carrier ratio Was measured and found to be essentially independent of the radiation angle. The average 5SB noise level Was -81 dBc/H. at an offset of 150 kH. from the carrier. An average improvement in the SSB noise-eo-carrier ratio of 5 dB was measured for a 100-transistor grid compared to a l6.transutor grid.",

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author = "Hacker, {J. B.} and {De Lisio}, {M. P.} and Moonil Kim and Liu, {Cheh Ming} and Li, {Sri Jie} and Wedge, {S. W.} and Rutledge, {D. B.}",

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doi = "10.1109/9780470544068.ch3",

language = "English",

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T1 - A to-watt x-band grid oscillator

AU - Hacker, J. B.

AU - De Lisio, M. P.

AU - Kim, Moonil

AU - Liu, Cheh Ming

AU - Li, Sri Jie

AU - Wedge, S. W.

AU - Rutledge, D. B.

PY - 2009/1/1

Y1 - 2009/1/1

N2 - A 100.transistor MESFET grid oseillator haa been labricated that generates an effective radiated power of 660W at 9.8 GH. and has a directivity of 18.0 dB. This corresponds to a total radiated power of 10.3W, or 103mW per device. This is the largest recorded output power for a grid oscillator. The grid drain-source bias voltage is 1.4V and the total drain current for the grid is 6.0 A, resulting in an overall dc-to-rf efficiency of 23%. The pattern of the 55B noise-ta-carrier ratio Was measured and found to be essentially independent of the radiation angle. The average 5SB noise level Was -81 dBc/H. at an offset of 150 kH. from the carrier. An average improvement in the SSB noise-eo-carrier ratio of 5 dB was measured for a 100-transistor grid compared to a l6.transutor grid.

AB - A 100.transistor MESFET grid oseillator haa been labricated that generates an effective radiated power of 660W at 9.8 GH. and has a directivity of 18.0 dB. This corresponds to a total radiated power of 10.3W, or 103mW per device. This is the largest recorded output power for a grid oscillator. The grid drain-source bias voltage is 1.4V and the total drain current for the grid is 6.0 A, resulting in an overall dc-to-rf efficiency of 23%. The pattern of the 55B noise-ta-carrier ratio Was measured and found to be essentially independent of the radiation angle. The average 5SB noise level Was -81 dBc/H. at an offset of 150 kH. from the carrier. An average improvement in the SSB noise-eo-carrier ratio of 5 dB was measured for a 100-transistor grid compared to a l6.transutor grid.

KW - Computer architecture

KW - Equivalent circuits

KW - Injection-locked oscillators

KW - Logic gates

KW - Microprocessors

KW - Mirrors

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BT - Active Antennas and Quasi-Optical Arrays

PB - John Wiley and Sons Inc.

ER -

A to-watt x-band grid oscillator

Abstract

Keywords

ASJC Scopus subject areas

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