TY - GEN
T1 - A wide band 215-255 GHz CB differential amplifier in a 0.25-μm SiGe HBT technology
AU - Yoon, Daekeun
AU - Kim, Namhyung
AU - Pfeiffer, Ullich
AU - Heinemann, Bernd
AU - Rieh, Jae Sung
PY - 2013
Y1 - 2013
N2 - A wideband amplifier operating beyond 200 GHz has been developed in a 0.25-μm SiGe HBT technology. The common-base (CB) amplifier consists of 5 differential stages and a pair of Marchand baluns to allow single-ended S-parameter measurement. The amplifier shows a flat gain over 215-255 GHz, leading to a 3-dB bandwidth of 40 GHz with a peak gain of 10 dB. It consumes a total DC power of 153 mW with a 1.5 V supply voltage. The fabricated chip occupies an area of 400 × 600 μm2 including pads and baluns.
AB - A wideband amplifier operating beyond 200 GHz has been developed in a 0.25-μm SiGe HBT technology. The common-base (CB) amplifier consists of 5 differential stages and a pair of Marchand baluns to allow single-ended S-parameter measurement. The amplifier shows a flat gain over 215-255 GHz, leading to a 3-dB bandwidth of 40 GHz with a peak gain of 10 dB. It consumes a total DC power of 153 mW with a 1.5 V supply voltage. The fabricated chip occupies an area of 400 × 600 μm2 including pads and baluns.
KW - broadband amplifiers
KW - heteroj unction bipolar transistors
KW - monolithic microwave integrated circuit
KW - silicon
UR - http://www.scopus.com/inward/record.url?scp=84893378219&partnerID=8YFLogxK
U2 - 10.1109/APMC.2013.6695143
DO - 10.1109/APMC.2013.6695143
M3 - Conference contribution
AN - SCOPUS:84893378219
SN - 9781479914746
T3 - Asia-Pacific Microwave Conference Proceedings, APMC
SP - 351
EP - 353
BT - 2013 Asia-Pacific Microwave Conference Proceedings, APMC 2013
T2 - 2013 3rd Asia-Pacific Microwave Conference, APMC 2013
Y2 - 5 November 2013 through 8 November 2013
ER -