Abstract
This article proposes an output capacitor-less NMOS low-dropout regulator (LDO) using wide-range adaptive-gain nested Miller compensation (WAG-NMC) and pre-emphasis inverse (PI) biasing. Due to WAG-NMC, the LDO can provide a wide range of load current ( ILOAD ) from 0.1 to 300 mA while maintaining sufficiently high phase margin (PM) above 60° at all ILOAD conditions. WAG-NMC also extends a loop bandwidth (BW) up to 17.5 MHz with using only small compensation capacitors (CC) of 6.3 pF in total. Moreover, PI biasing enhances a slew rate (SR) at the gate of the NMOS power transistor by injecting an adaptive PI current into a supersource follower (SSF), which further improves transient response. The proposed LDO fabricated in a 180-nm CMOS process was fully integrated with an on-chip load capacitor (CL) of 100 pF. The LDO ensures small undershoot and overshoot of 48 and 59 mV, respectively, against large Δ ILOAD of 299 mA due to wide-BW and high SR. The proposed LDO also achieves a best figure of merit (FoM) of 1.72 ps among the state of the arts.
| Original language | English |
|---|---|
| Pages (from-to) | 2696-2708 |
| Number of pages | 13 |
| Journal | IEEE Journal of Solid-State Circuits |
| Volume | 58 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2023 Oct 1 |
Bibliographical note
Publisher Copyright:© 1966-2012 IEEE.
Keywords
- Adaptive-gain nested Miller compensation
- NMOS LDO
- capacitor-less LDO
- low-dropout regulator (LDO)
- pre-emphasis inverse (PI) biasing
- stability
- transient response
ASJC Scopus subject areas
- Electrical and Electronic Engineering
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