A Wide-Load-Range and High-Slew Capacitor-Less NMOS LDO With Adaptive-Gain Nested Miller Compensation and Pre-Emphasis Inverse Biasing

  • Hyunjun Park
  • , Woojoong Jung
  • , Minsu Kim
  • , Hyung Min Lee*
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

This article proposes an output capacitor-less NMOS low-dropout regulator (LDO) using wide-range adaptive-gain nested Miller compensation (WAG-NMC) and pre-emphasis inverse (PI) biasing. Due to WAG-NMC, the LDO can provide a wide range of load current ( ILOAD ) from 0.1 to 300 mA while maintaining sufficiently high phase margin (PM) above 60° at all ILOAD conditions. WAG-NMC also extends a loop bandwidth (BW) up to 17.5 MHz with using only small compensation capacitors (CC) of 6.3 pF in total. Moreover, PI biasing enhances a slew rate (SR) at the gate of the NMOS power transistor by injecting an adaptive PI current into a supersource follower (SSF), which further improves transient response. The proposed LDO fabricated in a 180-nm CMOS process was fully integrated with an on-chip load capacitor (CL) of 100 pF. The LDO ensures small undershoot and overshoot of 48 and 59 mV, respectively, against large Δ ILOAD of 299 mA due to wide-BW and high SR. The proposed LDO also achieves a best figure of merit (FoM) of 1.72 ps among the state of the arts.

Original languageEnglish
Pages (from-to)2696-2708
Number of pages13
JournalIEEE Journal of Solid-State Circuits
Volume58
Issue number10
DOIs
Publication statusPublished - 2023 Oct 1

Bibliographical note

Publisher Copyright:
© 1966-2012 IEEE.

Keywords

  • Adaptive-gain nested Miller compensation
  • NMOS LDO
  • capacitor-less LDO
  • low-dropout regulator (LDO)
  • pre-emphasis inverse (PI) biasing
  • stability
  • transient response

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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