A zinc-oxide thin-film transistor using a spun-on dielectric and gate electrode

Jae Hong Kwon; Jung Hoon Seo; Sang Il Shin; Byeong Kwon Ju

doi:10.1088/0022-3727/42/6/065105

A zinc-oxide thin-film transistor using a spun-on dielectric and gate electrode

Jae Hong Kwon, Jung Hoon Seo, Sang Il Shin, Byeong Kwon Ju

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

This paper presents an organic-inorganic hybrid transparent thin-film transistor (TTFT) with an active channel of zinc-oxide (ZnO). The solution-processed stagger type device consists of methyl-siloxane-based spin-on glass (SOG) and poly(3,4-ethylenedioxythiophene) : poly(styrenesulfonate) (PEDOT : PSS) for the dielectric and gate electrode, respectively. The TTFT, fabricated by this method, has an optical transmittance of 67.4%, and it displays a field effect mobility of 20.65 cm² V^-1 s ^-1, an on/off ratio of >10⁴, a threshold voltage of 6.9 V and a subthreshold swing of 1.02 V/decade when the drain voltage (V _DS) is 20 V.

Original language	English
Article number	065105
Journal	Journal of Physics D: Applied Physics
Volume	42
Issue number	6
DOIs	https://doi.org/10.1088/0022-3727/42/6/065105
Publication status	Published - 2009

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

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10.1088/0022-3727/42/6/065105

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title = "A zinc-oxide thin-film transistor using a spun-on dielectric and gate electrode",

abstract = "This paper presents an organic-inorganic hybrid transparent thin-film transistor (TTFT) with an active channel of zinc-oxide (ZnO). The solution-processed stagger type device consists of methyl-siloxane-based spin-on glass (SOG) and poly(3,4-ethylenedioxythiophene) : poly(styrenesulfonate) (PEDOT : PSS) for the dielectric and gate electrode, respectively. The TTFT, fabricated by this method, has an optical transmittance of 67.4%, and it displays a field effect mobility of 20.65 cm2 V-1 s -1, an on/off ratio of >104, a threshold voltage of 6.9 V and a subthreshold swing of 1.02 V/decade when the drain voltage (V DS) is 20 V.",

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AU - Kwon, Jae Hong

AU - Seo, Jung Hoon

AU - Shin, Sang Il

AU - Ju, Byeong Kwon

PY - 2009

Y1 - 2009

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AB - This paper presents an organic-inorganic hybrid transparent thin-film transistor (TTFT) with an active channel of zinc-oxide (ZnO). The solution-processed stagger type device consists of methyl-siloxane-based spin-on glass (SOG) and poly(3,4-ethylenedioxythiophene) : poly(styrenesulfonate) (PEDOT : PSS) for the dielectric and gate electrode, respectively. The TTFT, fabricated by this method, has an optical transmittance of 67.4%, and it displays a field effect mobility of 20.65 cm2 V-1 s -1, an on/off ratio of >104, a threshold voltage of 6.9 V and a subthreshold swing of 1.02 V/decade when the drain voltage (V DS) is 20 V.

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A zinc-oxide thin-film transistor using a spun-on dielectric and gate electrode

Abstract

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