This paper presents an organic-inorganic hybrid transparent thin-film transistor (TTFT) with an active channel of zinc-oxide (ZnO). The solution-processed stagger type device consists of methyl-siloxane-based spin-on glass (SOG) and poly(3,4-ethylenedioxythiophene) : poly(styrenesulfonate) (PEDOT : PSS) for the dielectric and gate electrode, respectively. The TTFT, fabricated by this method, has an optical transmittance of 67.4%, and it displays a field effect mobility of 20.65 cm2 V-1 s -1, an on/off ratio of >104, a threshold voltage of 6.9 V and a subthreshold swing of 1.02 V/decade when the drain voltage (V DS) is 20 V.
|Journal||Journal of Physics D: Applied Physics|
|Publication status||Published - 2009|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films