Abnormal dopant distribution in POCl3-diffused N+ emitter of textured silicon solar cells

Young Woo Ok, Ajeet Rohatgi, Yeon Ho Kil, Sung Eun Park, Dong Hwan Kim, Joon Sung Lee, Chel Jong Choi

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)


We investigated 2-D dopant distribution in a POCl3 -diffused n+ emitter formed on textured Si solar cells using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and simulation results demonstrate that the convex and concave regions of a pyramid in the textured Si surface show deeper and shallower junctions, respectively. By considering a strong dependence of phosphorus (P) diffusion on the Si interstitials, the abnormal profile of n+ emitter in the textured Si surface could be attributed to the inhomogeneous distribution of Si interstitials caused by the geometry of the pyramid texture.

Original languageEnglish
Article number5680936
Pages (from-to)351-353
Number of pages3
JournalIEEE Electron Device Letters
Issue number3
Publication statusPublished - 2011 Mar

Bibliographical note

Funding Information:
Manuscript received November 3, 2010; revised November 29, 2010; accepted December 3, 2010. Date of publication January 6, 2011; date of current version February 23, 2011. This work was supported in part by the New and Renewable Energy R&D program (2008-N-PV08-P-09) under the Korean Ministry of Knowledge Economy and in part by the World Class University program (R31-20029) of the Korean Ministry of Education, Science and Technology. The review of this letter was arranged by Editor P. K.-L. Yu.


  • Junction
  • Si interstitial
  • selective chemical etching
  • solar cells
  • transmission electron microscopy (TEM)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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