Acoustic emission characterization of hydrogen-induced exfoliation of silicon

Jaewoo Lee, Changbum Lee, Hee Eun Song, Bo Yun Jang, Wooyoung Yoon

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


Exfoliation of a thin silicon layer after hydrogen implantation was investigated as a potential step of a kerf-free wafer production process. Samples of p-type silicon were implanted with high doses of hydrogen ions at 2 MeV, and subsequently annealed at 500-800 C. The concentration profile of hydrogen ions implanted in silicon was simulated by using the stopping and range of ions in matter (SRIM2003) program. The obtained hydrogen depth normal distribution exhibited a narrow peak at 48 m, which was in good agreement with the calculated projection range of a 2 MeV hydrogen ion beam. During the annealing, crack nucleation was detected by using the acoustic emission technique. Layer splitting occurred at the projected range of implantation, and was characterized by performing acoustic emission parametric analysis.

Original languageEnglish
Pages (from-to)62-65
Number of pages4
JournalNanoscience and Nanotechnology Letters
Issue number1
Publication statusPublished - 2016 Jan


  • Acoustic Emission
  • Ion Beam
  • Kerf-Free
  • Silicon

ASJC Scopus subject areas

  • Materials Science(all)


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