Activation kinetics of implanted Si+ in GaN and application to fabricating lateral Schottky diodes

Y. Irokawa, Jihyun Kim, F. Ren, K. H. Baik, B. P. Gila, C. R. Abernathy, S. J. Pearton, C. C. Pan, G. T. Chen, J. I. Chyi

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

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Physics & Astronomy