Adaptive ECC for Tailored Protection of Nanoscale Memory

Dongyeob Shin; Jongsun Park; Jangwon Park; Somnath Paul; Swarup Bhunia

doi:10.1109/MDAT.2016.2615844

Adaptive ECC for Tailored Protection of Nanoscale Memory

Dongyeob Shin, Jongsun Park, Jangwon Park, Somnath Paul, Swarup Bhunia

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Editors note:Following technology scaling, runtime failure has emerged as one of the major challenges in modern VLSI designs under the increased parametric variability and low supply voltage. This issue is especially severe in nanoscale memory due to its high density and large capacity. In this work the authors present a novel reconfigurable Error Correction Code (ECC) to improve the reliability of nanoscale memory.

Original language	English
Article number	7586136
Pages (from-to)	84-93
Number of pages	10
Journal	IEEE Design and Test
Volume	34
Issue number	6
DOIs	https://doi.org/10.1109/MDAT.2016.2615844
Publication status	Published - 2017 Dec

Bibliographical note

Publisher Copyright:
©2017 IEEE.

Keywords

Error Correction Code (ECC)
Memory Failures
Robust Nanoscale Memory
Run-time Protection
Variable ECC

ASJC Scopus subject areas

Software
Hardware and Architecture
Electrical and Electronic Engineering

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10.1109/MDAT.2016.2615844

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AU - Park, Jangwon

AU - Paul, Somnath

AU - Bhunia, Swarup

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KW - Memory Failures

KW - Robust Nanoscale Memory

KW - Run-time Protection

KW - Variable ECC

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Adaptive ECC for Tailored Protection of Nanoscale Memory

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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