Abstract
Editors note:Following technology scaling, runtime failure has emerged as one of the major challenges in modern VLSI designs under the increased parametric variability and low supply voltage. This issue is especially severe in nanoscale memory due to its high density and large capacity. In this work the authors present a novel reconfigurable Error Correction Code (ECC) to improve the reliability of nanoscale memory.
Original language | English |
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Article number | 7586136 |
Pages (from-to) | 84-93 |
Number of pages | 10 |
Journal | IEEE Design and Test |
Volume | 34 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2017 Dec |
Bibliographical note
Publisher Copyright:©2017 IEEE.
Keywords
- Error Correction Code (ECC)
- Memory Failures
- Robust Nanoscale Memory
- Run-time Protection
- Variable ECC
ASJC Scopus subject areas
- Software
- Hardware and Architecture
- Electrical and Electronic Engineering