Advances in Ga2O3 processing and devices

Jiancheng Yang; Patrick H. Carey; Shihyun Ahn; F. Ren; Soohwan Jang; Jihyun Kim; David Hays; S. J. Pearton; A. Kuramata

doi:10.1149/08010.0959ecst

Advances in Ga2O3 processing and devices

Jiancheng Yang, Patrick H. Carey, Shihyun Ahn, F. Ren, Soohwan Jang, Jihyun Kim, David Hays, S. J. Pearton, A. Kuramata

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

Ga2O3 is a promising wide bandgap semiconductor for applications including power electronics and photodetectors and is available in large diameter, high quality bulk crystalline form. The high-power/high-voltage market is currently primarily served by Si and SiC devices. Ga2O3 is the leading candidate to address the ultrahigh power market (>1kW). We will discuss recent progress in developing Ohmic contacts using interlayers of ITO or AZO, high density plasma etching using ICP discharges and the resultant etch rates, morphologies and near-surface damage, behavior of hydrogen incorporated during ion implantation or plasma exposure, measurement of band offsets with dielectrics and application of these processes to vertical and lateral transistor structures.

Original language	English
Title of host publication	ECS Transactions
Editors	A. P. Abbott, R. Alkire, P. Allongue, T. J. Anderson, P. N. Bartlett, M. Bayachou, S. Bhansali, N. Birbilis, A. B. Bocarsly, C. Bock, O. V. Boltalina, S. Brankovic, R. Buchheit, D. A. Buttry, S. Calabrese Barton, M. T. Carter, V. Chaitanya, G. T. Cheek, Z. Chen, D. Chidambaram, B. A. Chin, J. W. Choi, D. Chu, D. E. Cliffel, H. Deligianni, V. Di Noto, N. Dimitrov, M. Doeff, E. A. Douglas, T. Druffel, K. Edstrom, J. M. Fenton, J. Fergus, J. Fransaer, Y. Fukunaka, D. Guyomard, H. Hamada, L. M. Haverhals, P. Hesketh, A. C. Hillier, J. K. Hite, H. Imahori, M. Inaba, M. Innocenti, M. Itagaki, C. Johnson, H. Katayama, S. H. Kilgore, D. J. Kim, J. Koehne, R. Kostecki, G. Krumdick, P. J. Kulesza, J. Leddy, J. J. Lee, O. Leonte, Y. C. Lu, B. L. Lucht, R. P. Lynch, M. Manivannan, R. A. Mantz, P. Marcus, V. Maurice, M. Mauter, J. Mauzeroll, H. N. McMurray, Y. S. Meng, E. L. Miller, I. Milosev, S. D. Minteer, S. Mitra, S. Mukerjee, R. Mukundan, J. Muldoon, L. Nagahara, S. R. Narayan, P. M. Natishan, M. Navaei, J. D. Nicholas, J. Noel, S. S. Nonnenmann, C. O'Dwyer, M. E. Orazem, Y. Oren, J. G. Park, P. Pharkya, P. N. Pintauro, S. Pylypenko, K. Rajeshwar, R. P. Ramasamy, C. Rhodes, D. P. Riemer, D. Roeper, M. Rohwerder, L. Romankiw, S. V. Rotkin, J. L. M. Rupp, M. J. Sailor, D. T. Schwartz, P. K. Sekhar, N. Sharma, A. Simonian, D. K. Smith, K. C. Smith, L. Soleymani, G. R. Stafford, J. A. Staser, V. Subramanian, V. R. Subramanian, K. B. Sundaram, A. H. Suroviec, K. Suto, M. Tao, T. Tatsuma, P. C. Trulove, P. Vanysek, N. Vasiljevic, J. T. Vaughey, S. Virtanen, H. Wang, W. Wang, J. F. Whitacre, G. Williams, M. Winter, D. L. Wood, G. Wu, N. Wu, J. Xiao, Y. Xing, H. Xu, J. J. Yang, G. Zangari
Publisher	Electrochemical Society Inc.
Pages	959-972
Number of pages	14
Edition	10
ISBN (Electronic)	9781607688273
ISBN (Print)	9781623324797
DOIs	https://doi.org/10.1149/08010.0959ecst
Publication status	Published - 2017
Event	232nd ECS Meeting - National Harbor, United States Duration: 2017 Oct 1 → 2017 Oct 5

Publication series

Name	ECS Transactions
Number	10
Volume	80
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Other

Other	232nd ECS Meeting
Country/Territory	United States
City	National Harbor
Period	17/10/1 → 17/10/5

Bibliographical note

Publisher Copyright:
© The Electrochemical Society.

ASJC Scopus subject areas

General Engineering

Access to Document

10.1149/08010.0959ecst

Cite this

Yang, J., Carey, P. H., Ahn, S., Ren, F., Jang, S., Kim, J., Hays, D., Pearton, S. J., & Kuramata, A. (2017). Advances in Ga2O3 processing and devices. In A. P. Abbott, R. Alkire, P. Allongue, T. J. Anderson, P. N. Bartlett, M. Bayachou, S. Bhansali, N. Birbilis, A. B. Bocarsly, C. Bock, O. V. Boltalina, S. Brankovic, R. Buchheit, D. A. Buttry, S. Calabrese Barton, M. T. Carter, V. Chaitanya, G. T. Cheek, Z. Chen, D. Chidambaram, B. A. Chin, J. W. Choi, D. Chu, D. E. Cliffel, H. Deligianni, V. Di Noto, N. Dimitrov, M. Doeff, E. A. Douglas, T. Druffel, K. Edstrom, J. M. Fenton, J. Fergus, J. Fransaer, Y. Fukunaka, D. Guyomard, H. Hamada, L. M. Haverhals, P. Hesketh, A. C. Hillier, J. K. Hite, H. Imahori, M. Inaba, M. Innocenti, M. Itagaki, C. Johnson, H. Katayama, S. H. Kilgore, D. J. Kim, J. Koehne, R. Kostecki, G. Krumdick, P. J. Kulesza, J. Leddy, J. J. Lee, O. Leonte, Y. C. Lu, B. L. Lucht, R. P. Lynch, M. Manivannan, R. A. Mantz, P. Marcus, V. Maurice, M. Mauter, J. Mauzeroll, H. N. McMurray, Y. S. Meng, E. L. Miller, I. Milosev, S. D. Minteer, S. Mitra, S. Mukerjee, R. Mukundan, J. Muldoon, L. Nagahara, S. R. Narayan, P. M. Natishan, M. Navaei, J. D. Nicholas, J. Noel, S. S. Nonnenmann, C. O'Dwyer, M. E. Orazem, Y. Oren, J. G. Park, P. Pharkya, P. N. Pintauro, S. Pylypenko, K. Rajeshwar, R. P. Ramasamy, C. Rhodes, D. P. Riemer, D. Roeper, M. Rohwerder, L. Romankiw, S. V. Rotkin, J. L. M. Rupp, M. J. Sailor, D. T. Schwartz, P. K. Sekhar, N. Sharma, A. Simonian, D. K. Smith, K. C. Smith, L. Soleymani, G. R. Stafford, J. A. Staser, V. Subramanian, V. R. Subramanian, K. B. Sundaram, A. H. Suroviec, K. Suto, M. Tao, T. Tatsuma, P. C. Trulove, P. Vanysek, N. Vasiljevic, J. T. Vaughey, S. Virtanen, H. Wang, W. Wang, J. F. Whitacre, G. Williams, M. Winter, D. L. Wood, G. Wu, N. Wu, J. Xiao, Y. Xing, H. Xu, J. J. Yang, ... G. Zangari (Eds.), ECS Transactions (10 ed., pp. 959-972). (ECS Transactions; Vol. 80, No. 10). Electrochemical Society Inc.. https://doi.org/10.1149/08010.0959ecst

Advances in Ga2O3 processing and devices. / Yang, Jiancheng; Carey, Patrick H.; Ahn, Shihyun et al.
ECS Transactions. ed. / A. P. Abbott; R. Alkire; P. Allongue; T. J. Anderson; P. N. Bartlett; M. Bayachou; S. Bhansali; N. Birbilis; A. B. Bocarsly; C. Bock; O. V. Boltalina; S. Brankovic; R. Buchheit; D. A. Buttry; S. Calabrese Barton; M. T. Carter; V. Chaitanya; G. T. Cheek; Z. Chen; D. Chidambaram; B. A. Chin; J. W. Choi; D. Chu; D. E. Cliffel; H. Deligianni; V. Di Noto; N. Dimitrov; M. Doeff; E. A. Douglas; T. Druffel; K. Edstrom; J. M. Fenton; J. Fergus; J. Fransaer; Y. Fukunaka; D. Guyomard; H. Hamada; L. M. Haverhals; P. Hesketh; A. C. Hillier; J. K. Hite; H. Imahori; M. Inaba; M. Innocenti; M. Itagaki; C. Johnson; H. Katayama; S. H. Kilgore; D. J. Kim; J. Koehne; R. Kostecki; G. Krumdick; P. J. Kulesza; J. Leddy; J. J. Lee; O. Leonte; Y. C. Lu; B. L. Lucht; R. P. Lynch; M. Manivannan; R. A. Mantz; P. Marcus; V. Maurice; M. Mauter; J. Mauzeroll; H. N. McMurray; Y. S. Meng; E. L. Miller; I. Milosev; S. D. Minteer; S. Mitra; S. Mukerjee; R. Mukundan; J. Muldoon; L. Nagahara; S. R. Narayan; P. M. Natishan; M. Navaei; J. D. Nicholas; J. Noel; S. S. Nonnenmann; C. O'Dwyer; M. E. Orazem; Y. Oren; J. G. Park; P. Pharkya; P. N. Pintauro; S. Pylypenko; K. Rajeshwar; R. P. Ramasamy; C. Rhodes; D. P. Riemer; D. Roeper; M. Rohwerder; L. Romankiw; S. V. Rotkin; J. L. M. Rupp; M. J. Sailor; D. T. Schwartz; P. K. Sekhar; N. Sharma; A. Simonian; D. K. Smith; K. C. Smith; L. Soleymani; G. R. Stafford; J. A. Staser; V. Subramanian; V. R. Subramanian; K. B. Sundaram; A. H. Suroviec; K. Suto; M. Tao; T. Tatsuma; P. C. Trulove; P. Vanysek; N. Vasiljevic; J. T. Vaughey; S. Virtanen; H. Wang; W. Wang; J. F. Whitacre; G. Williams; M. Winter; D. L. Wood; G. Wu; N. Wu; J. Xiao; Y. Xing; H. Xu; J. J. Yang; G. Zangari. 10. ed. Electrochemical Society Inc., 2017. p. 959-972 (ECS Transactions; Vol. 80, No. 10).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yang, J, Carey, PH, Ahn, S, Ren, F, Jang, S, Kim, J, Hays, D, Pearton, SJ & Kuramata, A 2017, Advances in Ga2O3 processing and devices. in AP Abbott, R Alkire, P Allongue, TJ Anderson, PN Bartlett, M Bayachou, S Bhansali, N Birbilis, AB Bocarsly, C Bock, OV Boltalina, S Brankovic, R Buchheit, DA Buttry, S Calabrese Barton, MT Carter, V Chaitanya, GT Cheek, Z Chen, D Chidambaram, BA Chin, JW Choi, D Chu, DE Cliffel, H Deligianni, V Di Noto, N Dimitrov, M Doeff, EA Douglas, T Druffel, K Edstrom, JM Fenton, J Fergus, J Fransaer, Y Fukunaka, D Guyomard, H Hamada, LM Haverhals, P Hesketh, AC Hillier, JK Hite, H Imahori, M Inaba, M Innocenti, M Itagaki, C Johnson, H Katayama, SH Kilgore, DJ Kim, J Koehne, R Kostecki, G Krumdick, PJ Kulesza, J Leddy, JJ Lee, O Leonte, YC Lu, BL Lucht, RP Lynch, M Manivannan, RA Mantz, P Marcus, V Maurice, M Mauter, J Mauzeroll, HN McMurray, YS Meng, EL Miller, I Milosev, SD Minteer, S Mitra, S Mukerjee, R Mukundan, J Muldoon, L Nagahara, SR Narayan, PM Natishan, M Navaei, JD Nicholas, J Noel, SS Nonnenmann, C O'Dwyer, ME Orazem, Y Oren, JG Park, P Pharkya, PN Pintauro, S Pylypenko, K Rajeshwar, RP Ramasamy, C Rhodes, DP Riemer, D Roeper, M Rohwerder, L Romankiw, SV Rotkin, JLM Rupp, MJ Sailor, DT Schwartz, PK Sekhar, N Sharma, A Simonian, DK Smith, KC Smith, L Soleymani, GR Stafford, JA Staser, V Subramanian, VR Subramanian, KB Sundaram, AH Suroviec, K Suto, M Tao, T Tatsuma, PC Trulove, P Vanysek, N Vasiljevic, JT Vaughey, S Virtanen, H Wang, W Wang, JF Whitacre, G Williams, M Winter, DL Wood, G Wu, N Wu, J Xiao, Y Xing, H Xu, JJ Yang & G Zangari (eds), ECS Transactions. 10 edn, ECS Transactions, no. 10, vol. 80, Electrochemical Society Inc., pp. 959-972, 232nd ECS Meeting, National Harbor, United States, 17/10/1. https://doi.org/10.1149/08010.0959ecst

Yang J, Carey PH, Ahn S, Ren F, Jang S, Kim J et al. Advances in Ga2O3 processing and devices. In Abbott AP, Alkire R, Allongue P, Anderson TJ, Bartlett PN, Bayachou M, Bhansali S, Birbilis N, Bocarsly AB, Bock C, Boltalina OV, Brankovic S, Buchheit R, Buttry DA, Calabrese Barton S, Carter MT, Chaitanya V, Cheek GT, Chen Z, Chidambaram D, Chin BA, Choi JW, Chu D, Cliffel DE, Deligianni H, Di Noto V, Dimitrov N, Doeff M, Douglas EA, Druffel T, Edstrom K, Fenton JM, Fergus J, Fransaer J, Fukunaka Y, Guyomard D, Hamada H, Haverhals LM, Hesketh P, Hillier AC, Hite JK, Imahori H, Inaba M, Innocenti M, Itagaki M, Johnson C, Katayama H, Kilgore SH, Kim DJ, Koehne J, Kostecki R, Krumdick G, Kulesza PJ, Leddy J, Lee JJ, Leonte O, Lu YC, Lucht BL, Lynch RP, Manivannan M, Mantz RA, Marcus P, Maurice V, Mauter M, Mauzeroll J, McMurray HN, Meng YS, Miller EL, Milosev I, Minteer SD, Mitra S, Mukerjee S, Mukundan R, Muldoon J, Nagahara L, Narayan SR, Natishan PM, Navaei M, Nicholas JD, Noel J, Nonnenmann SS, O'Dwyer C, Orazem ME, Oren Y, Park JG, Pharkya P, Pintauro PN, Pylypenko S, Rajeshwar K, Ramasamy RP, Rhodes C, Riemer DP, Roeper D, Rohwerder M, Romankiw L, Rotkin SV, Rupp JLM, Sailor MJ, Schwartz DT, Sekhar PK, Sharma N, Simonian A, Smith DK, Smith KC, Soleymani L, Stafford GR, Staser JA, Subramanian V, Subramanian VR, Sundaram KB, Suroviec AH, Suto K, Tao M, Tatsuma T, Trulove PC, Vanysek P, Vasiljevic N, Vaughey JT, Virtanen S, Wang H, Wang W, Whitacre JF, Williams G, Winter M, Wood DL, Wu G, Wu N, Xiao J, Xing Y, Xu H, Yang JJ, Zangari G, editors, ECS Transactions. 10 ed. Electrochemical Society Inc. 2017. p. 959-972. (ECS Transactions; 10). doi: 10.1149/08010.0959ecst

Yang, Jiancheng ; Carey, Patrick H. ; Ahn, Shihyun et al. / Advances in Ga2O3 processing and devices. ECS Transactions. editor / A. P. Abbott ; R. Alkire ; P. Allongue ; T. J. Anderson ; P. N. Bartlett ; M. Bayachou ; S. Bhansali ; N. Birbilis ; A. B. Bocarsly ; C. Bock ; O. V. Boltalina ; S. Brankovic ; R. Buchheit ; D. A. Buttry ; S. Calabrese Barton ; M. T. Carter ; V. Chaitanya ; G. T. Cheek ; Z. Chen ; D. Chidambaram ; B. A. Chin ; J. W. Choi ; D. Chu ; D. E. Cliffel ; H. Deligianni ; V. Di Noto ; N. Dimitrov ; M. Doeff ; E. A. Douglas ; T. Druffel ; K. Edstrom ; J. M. Fenton ; J. Fergus ; J. Fransaer ; Y. Fukunaka ; D. Guyomard ; H. Hamada ; L. M. Haverhals ; P. Hesketh ; A. C. Hillier ; J. K. Hite ; H. Imahori ; M. Inaba ; M. Innocenti ; M. Itagaki ; C. Johnson ; H. Katayama ; S. H. Kilgore ; D. J. Kim ; J. Koehne ; R. Kostecki ; G. Krumdick ; P. J. Kulesza ; J. Leddy ; J. J. Lee ; O. Leonte ; Y. C. Lu ; B. L. Lucht ; R. P. Lynch ; M. Manivannan ; R. A. Mantz ; P. Marcus ; V. Maurice ; M. Mauter ; J. Mauzeroll ; H. N. McMurray ; Y. S. Meng ; E. L. Miller ; I. Milosev ; S. D. Minteer ; S. Mitra ; S. Mukerjee ; R. Mukundan ; J. Muldoon ; L. Nagahara ; S. R. Narayan ; P. M. Natishan ; M. Navaei ; J. D. Nicholas ; J. Noel ; S. S. Nonnenmann ; C. O'Dwyer ; M. E. Orazem ; Y. Oren ; J. G. Park ; P. Pharkya ; P. N. Pintauro ; S. Pylypenko ; K. Rajeshwar ; R. P. Ramasamy ; C. Rhodes ; D. P. Riemer ; D. Roeper ; M. Rohwerder ; L. Romankiw ; S. V. Rotkin ; J. L. M. Rupp ; M. J. Sailor ; D. T. Schwartz ; P. K. Sekhar ; N. Sharma ; A. Simonian ; D. K. Smith ; K. C. Smith ; L. Soleymani ; G. R. Stafford ; J. A. Staser ; V. Subramanian ; V. R. Subramanian ; K. B. Sundaram ; A. H. Suroviec ; K. Suto ; M. Tao ; T. Tatsuma ; P. C. Trulove ; P. Vanysek ; N. Vasiljevic ; J. T. Vaughey ; S. Virtanen ; H. Wang ; W. Wang ; J. F. Whitacre ; G. Williams ; M. Winter ; D. L. Wood ; G. Wu ; N. Wu ; J. Xiao ; Y. Xing ; H. Xu ; J. J. Yang ; G. Zangari. 10. ed. Electrochemical Society Inc., 2017. pp. 959-972 (ECS Transactions; 10).

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title = "Advances in Ga2O3 processing and devices",

abstract = "Ga2O3 is a promising wide bandgap semiconductor for applications including power electronics and photodetectors and is available in large diameter, high quality bulk crystalline form. The high-power/high-voltage market is currently primarily served by Si and SiC devices. Ga2O3 is the leading candidate to address the ultrahigh power market (>1kW). We will discuss recent progress in developing Ohmic contacts using interlayers of ITO or AZO, high density plasma etching using ICP discharges and the resultant etch rates, morphologies and near-surface damage, behavior of hydrogen incorporated during ion implantation or plasma exposure, measurement of band offsets with dielectrics and application of these processes to vertical and lateral transistor structures.",

author = "Jiancheng Yang and Carey, {Patrick H.} and Shihyun Ahn and F. Ren and Soohwan Jang and Jihyun Kim and David Hays and Pearton, {S. J.} and A. Kuramata",

note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; 232nd ECS Meeting ; Conference date: 01-10-2017 Through 05-10-2017",

year = "2017",

doi = "10.1149/08010.0959ecst",

language = "English",

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AU - Yang, Jiancheng

AU - Carey, Patrick H.

AU - Ahn, Shihyun

AU - Ren, F.

AU - Jang, Soohwan

AU - Kim, Jihyun

AU - Hays, David

AU - Pearton, S. J.

AU - Kuramata, A.

N1 - Publisher Copyright: © The Electrochemical Society.

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N2 - Ga2O3 is a promising wide bandgap semiconductor for applications including power electronics and photodetectors and is available in large diameter, high quality bulk crystalline form. The high-power/high-voltage market is currently primarily served by Si and SiC devices. Ga2O3 is the leading candidate to address the ultrahigh power market (>1kW). We will discuss recent progress in developing Ohmic contacts using interlayers of ITO or AZO, high density plasma etching using ICP discharges and the resultant etch rates, morphologies and near-surface damage, behavior of hydrogen incorporated during ion implantation or plasma exposure, measurement of band offsets with dielectrics and application of these processes to vertical and lateral transistor structures.

AB - Ga2O3 is a promising wide bandgap semiconductor for applications including power electronics and photodetectors and is available in large diameter, high quality bulk crystalline form. The high-power/high-voltage market is currently primarily served by Si and SiC devices. Ga2O3 is the leading candidate to address the ultrahigh power market (>1kW). We will discuss recent progress in developing Ohmic contacts using interlayers of ITO or AZO, high density plasma etching using ICP discharges and the resultant etch rates, morphologies and near-surface damage, behavior of hydrogen incorporated during ion implantation or plasma exposure, measurement of band offsets with dielectrics and application of these processes to vertical and lateral transistor structures.

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A2 - Abbott, A. P.

A2 - Alkire, R.

A2 - Allongue, P.

A2 - Anderson, T. J.

A2 - Bartlett, P. N.

A2 - Bayachou, M.

A2 - Bhansali, S.

A2 - Birbilis, N.

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A2 - Bock, C.

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A2 - Brankovic, S.

A2 - Buchheit, R.

A2 - Buttry, D. A.

A2 - Calabrese Barton, S.

A2 - Carter, M. T.

A2 - Chaitanya, V.

A2 - Cheek, G. T.

A2 - Chen, Z.

A2 - Chidambaram, D.

A2 - Chin, B. A.

A2 - Choi, J. W.

A2 - Chu, D.

A2 - Cliffel, D. E.

A2 - Deligianni, H.

A2 - Di Noto, V.

A2 - Dimitrov, N.

A2 - Doeff, M.

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A2 - Edstrom, K.

A2 - Fenton, J. M.

A2 - Fergus, J.

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A2 - Fukunaka, Y.

A2 - Guyomard, D.

A2 - Hamada, H.

A2 - Haverhals, L. M.

A2 - Hesketh, P.

A2 - Hillier, A. C.

A2 - Hite, J. K.

A2 - Imahori, H.

A2 - Inaba, M.

A2 - Innocenti, M.

A2 - Itagaki, M.

A2 - Johnson, C.

A2 - Katayama, H.

A2 - Kilgore, S. H.

A2 - Kim, D. J.

A2 - Koehne, J.

A2 - Kostecki, R.

A2 - Krumdick, G.

A2 - Kulesza, P. J.

A2 - Leddy, J.

A2 - Lee, J. J.

A2 - Leonte, O.

A2 - Lu, Y. C.

A2 - Lucht, B. L.

A2 - Lynch, R. P.

A2 - Manivannan, M.

A2 - Mantz, R. A.

A2 - Marcus, P.

A2 - Maurice, V.

A2 - Mauter, M.

A2 - Mauzeroll, J.

A2 - McMurray, H. N.

A2 - Meng, Y. S.

A2 - Miller, E. L.

A2 - Milosev, I.

A2 - Minteer, S. D.

A2 - Mitra, S.

A2 - Mukerjee, S.

A2 - Mukundan, R.

A2 - Muldoon, J.

A2 - Nagahara, L.

A2 - Narayan, S. R.

A2 - Natishan, P. M.

A2 - Navaei, M.

A2 - Nicholas, J. D.

A2 - Noel, J.

A2 - Nonnenmann, S. S.

A2 - O'Dwyer, C.

A2 - Orazem, M. E.

A2 - Oren, Y.

A2 - Park, J. G.

A2 - Pharkya, P.

A2 - Pintauro, P. N.

A2 - Pylypenko, S.

A2 - Rajeshwar, K.

A2 - Ramasamy, R. P.

A2 - Rhodes, C.

A2 - Riemer, D. P.

A2 - Roeper, D.

A2 - Rohwerder, M.

A2 - Romankiw, L.

A2 - Rotkin, S. V.

A2 - Rupp, J. L. M.

A2 - Sailor, M. J.

A2 - Schwartz, D. T.

A2 - Sekhar, P. K.

A2 - Sharma, N.

A2 - Simonian, A.

A2 - Smith, D. K.

A2 - Smith, K. C.

A2 - Soleymani, L.

A2 - Stafford, G. R.

A2 - Staser, J. A.

A2 - Subramanian, V.

A2 - Subramanian, V. R.

A2 - Sundaram, K. B.

A2 - Suroviec, A. H.

A2 - Suto, K.

A2 - Tao, M.

A2 - Tatsuma, T.

A2 - Trulove, P. C.

A2 - Vanysek, P.

A2 - Vasiljevic, N.

A2 - Vaughey, J. T.

A2 - Virtanen, S.

A2 - Wang, H.

A2 - Wang, W.

A2 - Whitacre, J. F.

A2 - Williams, G.

A2 - Winter, M.

A2 - Wood, D. L.

A2 - Wu, G.

A2 - Wu, N.

A2 - Xiao, J.

A2 - Xing, Y.

A2 - Xu, H.

A2 - Yang, J. J.

A2 - Zangari, G.

PB - Electrochemical Society Inc.

T2 - 232nd ECS Meeting

Y2 - 1 October 2017 through 5 October 2017

ER -

Advances in Ga2O3 processing and devices

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