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Advances in Ga2O3 processing and devices
Jiancheng Yang
, Patrick H. Carey
, Shihyun Ahn
, F. Ren
, Soohwan Jang
, Jihyun Kim
, David Hays
, S. J. Pearton
, A. Kuramata
Research output
:
Chapter in Book/Report/Conference proceeding
›
Conference contribution
2
Citations (Scopus)
Overview
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Engineering
Dielectrics
100%
Ohmic Contacts
100%
Interlayer
100%
Etch Rate
100%
Power Electronics
100%
Ion Implantation
100%
Band Offset
100%
Damage Behavior
100%
Wide Bandgap Semiconductor
100%
Market Power
100%
Photometer
100%
Keyphrases
Ga2O3
100%
High Power
33%
Dielectric
33%
Ohmic Contact
33%
Photodetector
33%
Large Diameter
33%
Etching Rate
33%
Transistor Structure
33%
Ion Implantation
33%
Power Electronics
33%
Si Devices
33%
Band Offset
33%
Crystalline Form
33%
Plasma Exposure
33%
Wide Band Gap Semiconductors
33%
Exposure Measurement
33%
Pair-ion Plasma
33%
High Density Plasma Etching
33%
SiC Devices
33%
Lateral Transistor
33%
Vertical Transistors
33%
Ultrahigh Power
33%
Power Market
33%
ICP Discharge
33%
Near-surface Damage
33%
Surface Damageability
33%
Material Science
Density
100%
Transistor
100%
Indium Tin Oxide
100%
Ion Implantation
100%
Plasma Etching
100%
Band Offset
100%
Surface Damage
100%
Wide Bandgap Semiconductor
100%
Dielectric Material
100%
Earth and Planetary Sciences
Plasma Etching
100%