Advances in SiGe HBT BiCMOS technology

A. Joseph; L. Lanzerotti; X. Liu; D. Sheridan; J. Johnson; Q. Liu; J. Dunn; J. S. Rieh; D. Harame

Advances in SiGe HBT BiCMOS technology

A. Joseph, L. Lanzerotti, X. Liu, D. Sheridan, J. Johnson, Q. Liu, J. Dunn, J. S. Rieh, D. Harame

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) BiCMOS technology has established a strong foothold in the communication marketplace by offering a cost competitive solution for myriad of products. SiGe BiCMOS technologies currently address various applications ranging from 0.9 - 77 GHz. At the heart of this success is the ease of integration of a high performance SiGe HBT with the state-of-the-art CMOS and passive elements. Here, we present the advances in SiGe BiCMOS technologies and an outlook of future challenges and opportunities.

Original language	English
Title of host publication	2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
Subtitle of host publication	Digest of Papers
Editors	J.D. Cressler, J. Papapolymerou
Pages	1-4
Number of pages	4
Publication status	Published - 2004
Externally published	Yes
Event	2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers - Atlanta, GA, United States Duration: 2004 Sept 8 → 2004 Sept 10

Publication series

Name	2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers

Other

Other	2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers
Country/Territory	United States
City	Atlanta, GA
Period	04/9/8 → 04/9/10

Keywords

BiCMOS Technologies
Bipolar
SiGe HBT

ASJC Scopus subject areas

General Engineering

Cite this

Joseph, A., Lanzerotti, L., Liu, X., Sheridan, D., Johnson, J., Liu, Q., Dunn, J., Rieh, J. S., & Harame, D. (2004). Advances in SiGe HBT BiCMOS technology. In J. D. Cressler, & J. Papapolymerou (Eds.), 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers (pp. 1-4). (2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers).

Advances in SiGe HBT BiCMOS technology. / Joseph, A.; Lanzerotti, L.; Liu, X. et al.
2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers. ed. / J.D. Cressler; J. Papapolymerou. 2004. p. 1-4 (2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Joseph, A, Lanzerotti, L, Liu, X, Sheridan, D, Johnson, J, Liu, Q, Dunn, J, Rieh, JS & Harame, D 2004, Advances in SiGe HBT BiCMOS technology. in JD Cressler & J Papapolymerou (eds), 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers. 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers, pp. 1-4, 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers, Atlanta, GA, United States, 04/9/8.

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AU - Sheridan, D.

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AU - Liu, Q.

AU - Dunn, J.

AU - Rieh, J. S.

AU - Harame, D.

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AB - Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) BiCMOS technology has established a strong foothold in the communication marketplace by offering a cost competitive solution for myriad of products. SiGe BiCMOS technologies currently address various applications ranging from 0.9 - 77 GHz. At the heart of this success is the ease of integration of a high performance SiGe HBT with the state-of-the-art CMOS and passive elements. Here, we present the advances in SiGe BiCMOS technologies and an outlook of future challenges and opportunities.

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Advances in SiGe HBT BiCMOS technology

Abstract

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Keywords

ASJC Scopus subject areas

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