Ag clusters on ultra-thin, ordered SiO2 films

A. K. Santra; B. K. Min; D. W. Goodman

doi:10.1016/S0039-6028(02)01952-0

Ag clusters on ultra-thin, ordered SiO₂ films

A. K. Santra, B. K. Min, D. W. Goodman

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

Scanning tunneling microscopy (STM) and low energy electron diffraction have been used to optimize the key synthetic parameters for the preparation of oriented, SiO₂ films on Mo(1 1 2). Extremely flat, ultra-thin, single-crystalline SiO₂ films have been prepared via deposition of silicon, its subsequent oxidation, followed by an anneal. Highly resolved STM images have been obtained for the first time on these films. At room temperature, Ag clusters grow two-dimensionally on these oriented films with a preferred orientation and sinter with a bimodal size distribution upon exposure to elevated pressures (160 mb and 60 min) of oxygen. Annealing the as-deposited Ag clusters at elevated temperatures (600 K) in ultra-high vacuum also leads to sintering.

Original language	English
Pages (from-to)	L475-L479
Journal	Surface Science
Volume	515
Issue number	1
DOIs	https://doi.org/10.1016/S0039-6028(02)01952-0
Publication status	Published - 2002 Aug

Bibliographical note

Funding Information:
The authors acknowledge with pleasure the support of this work by the Department of Energy, Office of Basic Energy Sciences, Division of Chemical Sciences, and the Robert A. Welch Foundation.

Keywords

Epitaxy
Molybdenum
Scanning tunneling microscopy
Silicon oxides
Silver
Sintering

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

Access to Document

10.1016/S0039-6028(02)01952-0

Cite this

@article{71a53568be8e410f8d0bdc149e55d8e6,

title = "Ag clusters on ultra-thin, ordered SiO2 films",

abstract = "Scanning tunneling microscopy (STM) and low energy electron diffraction have been used to optimize the key synthetic parameters for the preparation of oriented, SiO2 films on Mo(1 1 2). Extremely flat, ultra-thin, single-crystalline SiO2 films have been prepared via deposition of silicon, its subsequent oxidation, followed by an anneal. Highly resolved STM images have been obtained for the first time on these films. At room temperature, Ag clusters grow two-dimensionally on these oriented films with a preferred orientation and sinter with a bimodal size distribution upon exposure to elevated pressures (160 mb and 60 min) of oxygen. Annealing the as-deposited Ag clusters at elevated temperatures (600 K) in ultra-high vacuum also leads to sintering.",

keywords = "Epitaxy, Molybdenum, Scanning tunneling microscopy, Silicon oxides, Silver, Sintering",

author = "Santra, {A. K.} and Min, {B. K.} and Goodman, {D. W.}",

note = "Funding Information: The authors acknowledge with pleasure the support of this work by the Department of Energy, Office of Basic Energy Sciences, Division of Chemical Sciences, and the Robert A. Welch Foundation.",

year = "2002",

month = aug,

doi = "10.1016/S0039-6028(02)01952-0",

language = "English",

volume = "515",

pages = "L475--L479",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier B.V.",

number = "1",

}

TY - JOUR

T1 - Ag clusters on ultra-thin, ordered SiO2 films

AU - Santra, A. K.

AU - Min, B. K.

AU - Goodman, D. W.

N1 - Funding Information: The authors acknowledge with pleasure the support of this work by the Department of Energy, Office of Basic Energy Sciences, Division of Chemical Sciences, and the Robert A. Welch Foundation.

PY - 2002/8

Y1 - 2002/8

N2 - Scanning tunneling microscopy (STM) and low energy electron diffraction have been used to optimize the key synthetic parameters for the preparation of oriented, SiO2 films on Mo(1 1 2). Extremely flat, ultra-thin, single-crystalline SiO2 films have been prepared via deposition of silicon, its subsequent oxidation, followed by an anneal. Highly resolved STM images have been obtained for the first time on these films. At room temperature, Ag clusters grow two-dimensionally on these oriented films with a preferred orientation and sinter with a bimodal size distribution upon exposure to elevated pressures (160 mb and 60 min) of oxygen. Annealing the as-deposited Ag clusters at elevated temperatures (600 K) in ultra-high vacuum also leads to sintering.

AB - Scanning tunneling microscopy (STM) and low energy electron diffraction have been used to optimize the key synthetic parameters for the preparation of oriented, SiO2 films on Mo(1 1 2). Extremely flat, ultra-thin, single-crystalline SiO2 films have been prepared via deposition of silicon, its subsequent oxidation, followed by an anneal. Highly resolved STM images have been obtained for the first time on these films. At room temperature, Ag clusters grow two-dimensionally on these oriented films with a preferred orientation and sinter with a bimodal size distribution upon exposure to elevated pressures (160 mb and 60 min) of oxygen. Annealing the as-deposited Ag clusters at elevated temperatures (600 K) in ultra-high vacuum also leads to sintering.

KW - Epitaxy

KW - Molybdenum

KW - Scanning tunneling microscopy

KW - Silicon oxides

KW - Silver

KW - Sintering

UR - http://www.scopus.com/inward/record.url?scp=0036683336&partnerID=8YFLogxK

U2 - 10.1016/S0039-6028(02)01952-0

DO - 10.1016/S0039-6028(02)01952-0

M3 - Article

AN - SCOPUS:0036683336

SN - 0039-6028

VL - 515

SP - L475-L479

JO - Surface Science

JF - Surface Science

IS - 1

ER -