Ag nanowire-based electrodes for improving the output power of ultraviolet AlGaN-based light-emitting diodes

Jae Seong Park; Jae Ho Kim; Jin Young Na; Dae Hyun Kim; Daesung Kang; Sun Kyung Kim; Tae Yeon Seong

doi:10.1016/j.jallcom.2017.01.351

Ag nanowire-based electrodes for improving the output power of ultraviolet AlGaN-based light-emitting diodes

Jae Seong Park, Jae Ho Kim, Jin Young Na, Dae Hyun Kim, Daesung Kang, Sun Kyung Kim, Tae Yeon Seong

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

We developed hybrid Ag nanodots (NDs)/Ag nanowires (NWs) electrodes for enhancing the light output power of near ultraviolet (NUV) AlGaN-based light-emitting diodes (LEDs). At 385 nm, 10-nm-thick ITO-only films deposited on p-GaN/sapphire gave a transmittance of 70%, whereas hybrid Ag NDs/Ag NWs film showed a transmittance of 47%. LEDs with ITO-only, Ag NDs/Ag NWs, and activated-Ag NDs/Ag NWs electrodes showed forward-bias voltages of 3.50, 3.65, and 3.57 V, respectively, at 20 mA. The LEDs with the ITO-only, Ag NDs/Ag NWs, and activated-Ag NDs/Ag NWs electrodes produced series resistances of 14.3, 15.2, and 14.5 Ω, respectively. The LEDs with the Ag NDs/Ag NWs and activated-Ag NDs/Ag NWs electrodes yielded 13.1% and 23.7% higher light output powers, respectively, at 20 mA than that produced with the ITO-only electrode. On the basis of the emission images obtained from the LEDs with 10-nm-thick ITO-only, Ag NDs/Ag NWs, and activated-Ag NDs/Ag NWs electrodes, the enhanced light output power is attributed to effective current spreading and current injection.

Original language	English
Pages (from-to)	198-203
Number of pages	6
Journal	Journal of Alloys and Compounds
Volume	703
DOIs	https://doi.org/10.1016/j.jallcom.2017.01.351
Publication status	Published - 2017

Bibliographical note

Funding Information:
This work was supported by the Brain Korea 21 plus program funded by the Ministry of Science, ICT and Future Planning, Korea, and by LG Innotek Co., Ltd.

Publisher Copyright:
© 2017 Elsevier B.V.

Keywords

Ag nanodot
Ag nanowire
Light-emitting diode
Ohmic spreader

ASJC Scopus subject areas

Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.jallcom.2017.01.351

Cite this

@article{2e458adfd2cf496db8a2b1ac36f610dd,

title = "Ag nanowire-based electrodes for improving the output power of ultraviolet AlGaN-based light-emitting diodes",

abstract = "We developed hybrid Ag nanodots (NDs)/Ag nanowires (NWs) electrodes for enhancing the light output power of near ultraviolet (NUV) AlGaN-based light-emitting diodes (LEDs). At 385 nm, 10-nm-thick ITO-only films deposited on p-GaN/sapphire gave a transmittance of 70%, whereas hybrid Ag NDs/Ag NWs film showed a transmittance of 47%. LEDs with ITO-only, Ag NDs/Ag NWs, and activated-Ag NDs/Ag NWs electrodes showed forward-bias voltages of 3.50, 3.65, and 3.57 V, respectively, at 20 mA. The LEDs with the ITO-only, Ag NDs/Ag NWs, and activated-Ag NDs/Ag NWs electrodes produced series resistances of 14.3, 15.2, and 14.5 Ω, respectively. The LEDs with the Ag NDs/Ag NWs and activated-Ag NDs/Ag NWs electrodes yielded 13.1% and 23.7% higher light output powers, respectively, at 20 mA than that produced with the ITO-only electrode. On the basis of the emission images obtained from the LEDs with 10-nm-thick ITO-only, Ag NDs/Ag NWs, and activated-Ag NDs/Ag NWs electrodes, the enhanced light output power is attributed to effective current spreading and current injection.",

keywords = "Ag nanodot, Ag nanowire, Light-emitting diode, Ohmic spreader",

author = "Park, {Jae Seong} and Kim, {Jae Ho} and Na, {Jin Young} and Kim, {Dae Hyun} and Daesung Kang and Kim, {Sun Kyung} and Seong, {Tae Yeon}",

note = "Funding Information: This work was supported by the Brain Korea 21 plus program funded by the Ministry of Science, ICT and Future Planning, Korea, and by LG Innotek Co., Ltd. Publisher Copyright: {\textcopyright} 2017 Elsevier B.V.",

year = "2017",

doi = "10.1016/j.jallcom.2017.01.351",

language = "English",

volume = "703",

pages = "198--203",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Ag nanowire-based electrodes for improving the output power of ultraviolet AlGaN-based light-emitting diodes

AU - Park, Jae Seong

AU - Kim, Jae Ho

AU - Na, Jin Young

AU - Kim, Dae Hyun

AU - Kang, Daesung

AU - Kim, Sun Kyung

AU - Seong, Tae Yeon

N1 - Funding Information: This work was supported by the Brain Korea 21 plus program funded by the Ministry of Science, ICT and Future Planning, Korea, and by LG Innotek Co., Ltd. Publisher Copyright: © 2017 Elsevier B.V.

PY - 2017

Y1 - 2017

N2 - We developed hybrid Ag nanodots (NDs)/Ag nanowires (NWs) electrodes for enhancing the light output power of near ultraviolet (NUV) AlGaN-based light-emitting diodes (LEDs). At 385 nm, 10-nm-thick ITO-only films deposited on p-GaN/sapphire gave a transmittance of 70%, whereas hybrid Ag NDs/Ag NWs film showed a transmittance of 47%. LEDs with ITO-only, Ag NDs/Ag NWs, and activated-Ag NDs/Ag NWs electrodes showed forward-bias voltages of 3.50, 3.65, and 3.57 V, respectively, at 20 mA. The LEDs with the ITO-only, Ag NDs/Ag NWs, and activated-Ag NDs/Ag NWs electrodes produced series resistances of 14.3, 15.2, and 14.5 Ω, respectively. The LEDs with the Ag NDs/Ag NWs and activated-Ag NDs/Ag NWs electrodes yielded 13.1% and 23.7% higher light output powers, respectively, at 20 mA than that produced with the ITO-only electrode. On the basis of the emission images obtained from the LEDs with 10-nm-thick ITO-only, Ag NDs/Ag NWs, and activated-Ag NDs/Ag NWs electrodes, the enhanced light output power is attributed to effective current spreading and current injection.

AB - We developed hybrid Ag nanodots (NDs)/Ag nanowires (NWs) electrodes for enhancing the light output power of near ultraviolet (NUV) AlGaN-based light-emitting diodes (LEDs). At 385 nm, 10-nm-thick ITO-only films deposited on p-GaN/sapphire gave a transmittance of 70%, whereas hybrid Ag NDs/Ag NWs film showed a transmittance of 47%. LEDs with ITO-only, Ag NDs/Ag NWs, and activated-Ag NDs/Ag NWs electrodes showed forward-bias voltages of 3.50, 3.65, and 3.57 V, respectively, at 20 mA. The LEDs with the ITO-only, Ag NDs/Ag NWs, and activated-Ag NDs/Ag NWs electrodes produced series resistances of 14.3, 15.2, and 14.5 Ω, respectively. The LEDs with the Ag NDs/Ag NWs and activated-Ag NDs/Ag NWs electrodes yielded 13.1% and 23.7% higher light output powers, respectively, at 20 mA than that produced with the ITO-only electrode. On the basis of the emission images obtained from the LEDs with 10-nm-thick ITO-only, Ag NDs/Ag NWs, and activated-Ag NDs/Ag NWs electrodes, the enhanced light output power is attributed to effective current spreading and current injection.

KW - Ag nanodot

KW - Ag nanowire

KW - Light-emitting diode

KW - Ohmic spreader

UR - http://www.scopus.com/inward/record.url?scp=85011578019&partnerID=8YFLogxK

U2 - 10.1016/j.jallcom.2017.01.351

DO - 10.1016/j.jallcom.2017.01.351

M3 - Article

AN - SCOPUS:85011578019

SN - 0925-8388

VL - 703

SP - 198

EP - 203

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

ER -

Ag nanowire-based electrodes for improving the output power of ultraviolet AlGaN-based light-emitting diodes

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this