Air Annealing Process for Threshold Voltage Tuning of MoTe2 FET

Soojin Kim, Yeeun Roh, Younguk Choi, Ah Hyun Jun, Hojun Seo, Byeong Kwon Ju

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


A stable doping technique for modifying the conduction behaviour of two-dimensional (2D) nanomaterial-based transistors is imperative for applications based on low-power complementary oxide thin-film transistors. Achieving an ambipolar feature with a controlled threshold voltage in both the p-and n-regimes is crucial for applying MoTe2-based devices as electronic devices because their native doping states are unipolar. In this study, a simple method to tune the threshold voltage of MoTe2 field-effect transistors (FETs) was investigated in order to realise an enhancement-mode MoTe2 thin-film transistor by implementing a facile method to modulate the carrier polarity based on the oxidative properties of MoTe2 FETs. Annealing in air induced a continuous p-doping effect in the devices without significant electrical degradation. Through a precise control of the duration and temperature of the post-annealing process, the tailoring technique induces hole doping, which results in a remarkable shift in transfer characteristics, thus leading to a charge neutrality point of the devices at zero gate bias. This study demonstrates the considerable potential of air heating as a reliable and economical post-processing method for precisely modifying the threshold voltage and further controlling the doping states of MoTe2-based FETs for use in logic inverters with 2D semiconductors.

Original languageEnglish
Article number3840
JournalApplied Sciences (Switzerland)
Issue number8
Publication statusPublished - 2022 Apr 1

Bibliographical note

Funding Information:
Funding: This study was supported by the Brain Korea 21 Project in 2022 and Samsung Display Co., Ltd.

Publisher Copyright:
© 2022 by the authors. Licensee MDPI, Basel, Switzerland.


  • MoTe
  • charge neutrality
  • doping
  • field-effect transistors
  • threshold voltage
  • transition metal dichalcogenides

ASJC Scopus subject areas

  • Materials Science(all)
  • Instrumentation
  • Engineering(all)
  • Process Chemistry and Technology
  • Computer Science Applications
  • Fluid Flow and Transfer Processes


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