Air-gap type film bulk acoustic resonator using flexible thin substrate

Yu Ri Kang; Sung Chul Kang; Kyeong Kap Paek; Yong Kook Kim; Soo Won Kim; Byeong Kwon Ju

doi:10.1016/j.sna.2004.05.035

Air-gap type film bulk acoustic resonator using flexible thin substrate

Yu Ri Kang, Sung Chul Kang, Kyeong Kap Paek, Yong Kook Kim, Soo Won Kim, Byeong Kwon Ju

Research output: Contribution to journal › Article › peer-review

42 Citations (Scopus)

Abstract

This paper addresses the utilization of an ultra thin silicon wafer with thickness of 50 μm to fabricate film bulk wave acoustic resonator (FBAR) generating resonant motion at 2.5 GHz which can be applied to more flexible and accumulated microsystems. As the information and communication technology starts to improve, smaller and lighter systems are needed to be flexible in a worldwide market. To accomplish this many ideas on making the heavy and rigid pieces, such as RF filter or duplexer, thin FBAR using microelectromechanical systems technology is presented in this paper. As we fabricate the FBAR using thin silicon wafer with thickness of 50 μm, it is possible to realize integrated flexible microsystems and acquire properties better than the existing devices. The resonance characteristics of thin FBAR are predicted through MATLAB simulation and then thickness of electrode and piezoelectric thin film optimized are acquired. A parallel resonance frequency is measured at 2.487 GHz. The insertion loss, Q-factor, and K_eff² are also 1.368 dB, 996.68, and 3.91%, respectively.

Original language	English
Pages (from-to)	62-70
Number of pages	9
Journal	Sensors and Actuators, A: Physical
Volume	117
Issue number	1
DOIs	https://doi.org/10.1016/j.sna.2004.05.035
Publication status	Published - 2005 Jan 3

Keywords

Flexible microsystems
Resonance characteristics
Thin FBAR
Ultra thin silicon wafer

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering

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10.1016/j.sna.2004.05.035

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@article{b3ad5e6dc5194ed4916e3c0e807fb981,

title = "Air-gap type film bulk acoustic resonator using flexible thin substrate",

abstract = "This paper addresses the utilization of an ultra thin silicon wafer with thickness of 50 μm to fabricate film bulk wave acoustic resonator (FBAR) generating resonant motion at 2.5 GHz which can be applied to more flexible and accumulated microsystems. As the information and communication technology starts to improve, smaller and lighter systems are needed to be flexible in a worldwide market. To accomplish this many ideas on making the heavy and rigid pieces, such as RF filter or duplexer, thin FBAR using microelectromechanical systems technology is presented in this paper. As we fabricate the FBAR using thin silicon wafer with thickness of 50 μm, it is possible to realize integrated flexible microsystems and acquire properties better than the existing devices. The resonance characteristics of thin FBAR are predicted through MATLAB simulation and then thickness of electrode and piezoelectric thin film optimized are acquired. A parallel resonance frequency is measured at 2.487 GHz. The insertion loss, Q-factor, and Keff2 are also 1.368 dB, 996.68, and 3.91%, respectively.",

keywords = "Flexible microsystems, Resonance characteristics, Thin FBAR, Ultra thin silicon wafer",

author = "Kang, {Yu Ri} and Kang, {Sung Chul} and Paek, {Kyeong Kap} and Kim, {Yong Kook} and Kim, {Soo Won} and Ju, {Byeong Kwon}",

year = "2005",

month = jan,

day = "3",

doi = "10.1016/j.sna.2004.05.035",

language = "English",

volume = "117",

pages = "62--70",

journal = "Sensors and Actuators, A: Physical",

issn = "0924-4247",

publisher = "Elsevier B.V.",

number = "1",

}

TY - JOUR

T1 - Air-gap type film bulk acoustic resonator using flexible thin substrate

AU - Kang, Yu Ri

AU - Kang, Sung Chul

AU - Paek, Kyeong Kap

AU - Kim, Yong Kook

AU - Kim, Soo Won

AU - Ju, Byeong Kwon

PY - 2005/1/3

Y1 - 2005/1/3

N2 - This paper addresses the utilization of an ultra thin silicon wafer with thickness of 50 μm to fabricate film bulk wave acoustic resonator (FBAR) generating resonant motion at 2.5 GHz which can be applied to more flexible and accumulated microsystems. As the information and communication technology starts to improve, smaller and lighter systems are needed to be flexible in a worldwide market. To accomplish this many ideas on making the heavy and rigid pieces, such as RF filter or duplexer, thin FBAR using microelectromechanical systems technology is presented in this paper. As we fabricate the FBAR using thin silicon wafer with thickness of 50 μm, it is possible to realize integrated flexible microsystems and acquire properties better than the existing devices. The resonance characteristics of thin FBAR are predicted through MATLAB simulation and then thickness of electrode and piezoelectric thin film optimized are acquired. A parallel resonance frequency is measured at 2.487 GHz. The insertion loss, Q-factor, and Keff2 are also 1.368 dB, 996.68, and 3.91%, respectively.

AB - This paper addresses the utilization of an ultra thin silicon wafer with thickness of 50 μm to fabricate film bulk wave acoustic resonator (FBAR) generating resonant motion at 2.5 GHz which can be applied to more flexible and accumulated microsystems. As the information and communication technology starts to improve, smaller and lighter systems are needed to be flexible in a worldwide market. To accomplish this many ideas on making the heavy and rigid pieces, such as RF filter or duplexer, thin FBAR using microelectromechanical systems technology is presented in this paper. As we fabricate the FBAR using thin silicon wafer with thickness of 50 μm, it is possible to realize integrated flexible microsystems and acquire properties better than the existing devices. The resonance characteristics of thin FBAR are predicted through MATLAB simulation and then thickness of electrode and piezoelectric thin film optimized are acquired. A parallel resonance frequency is measured at 2.487 GHz. The insertion loss, Q-factor, and Keff2 are also 1.368 dB, 996.68, and 3.91%, respectively.

KW - Flexible microsystems

KW - Resonance characteristics

KW - Thin FBAR

KW - Ultra thin silicon wafer

UR - http://www.scopus.com/inward/record.url?scp=9644264128&partnerID=8YFLogxK

U2 - 10.1016/j.sna.2004.05.035

DO - 10.1016/j.sna.2004.05.035

M3 - Article

AN - SCOPUS:9644264128

SN - 0924-4247

VL - 117

SP - 62

EP - 70

JO - Sensors and Actuators, A: Physical

JF - Sensors and Actuators, A: Physical

IS - 1

ER -

Air-gap type film bulk acoustic resonator using flexible thin substrate

Abstract

Keywords

ASJC Scopus subject areas

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