Al-based Ohmic reflectors with low leakage currents and high reflectance for p-GaN flip-chip processes

S. W. Chae; D. H. Kim; T. G. Kim; K. Y. Ko; Y. M. Sung

doi:10.1063/1.2740173

Al-based Ohmic reflectors with low leakage currents and high reflectance for p-GaN flip-chip processes

S. W. Chae, D. H. Kim, T. G. Kim, K. Y. Ko, Y. M. Sung

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

The authors report the improvement of InGaNGaN light-emitting diodes on Al reflectors, commonly used as n -type GaN contacts. A Cu-doped indium oxide (CIO) (5 nm) /indium tin oxide (ITO) (380 nm) interlayer was deposited and annealed at 500 °C, after which an Al (400 nm) Ti-W (30 nm) layer was sputtered on the ITO interlayer to reflect the light. The reflectance of CIOITOAlTi-W was ∼92% at 460 nm, higher than that of the popular NiAgPt scheme, and the forward voltage was 3.2-3.3 V, similar to that of the NiAgPt contact. Furthermore, the mean leakage current of CIOITOAlTi-W was 0.12 μA, much lower than 0.54 μA of NiAgPt at -5 V.

Original language	English
Article number	201113
Journal	Applied Physics Letters
Volume	90
Issue number	20
DOIs	https://doi.org/10.1063/1.2740173
Publication status	Published - 2007

Bibliographical note

Funding Information:
This work was financially supported by the Samsung Electro-Mechanics Company as well as the MOST/KOSEF through the Quantum Photonic Science Research Center, Korea.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2740173

Cite this

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title = "Al-based Ohmic reflectors with low leakage currents and high reflectance for p-GaN flip-chip processes",

abstract = "The authors report the improvement of InGaNGaN light-emitting diodes on Al reflectors, commonly used as n -type GaN contacts. A Cu-doped indium oxide (CIO) (5 nm) /indium tin oxide (ITO) (380 nm) interlayer was deposited and annealed at 500 °C, after which an Al (400 nm) Ti-W (30 nm) layer was sputtered on the ITO interlayer to reflect the light. The reflectance of CIOITOAlTi-W was ∼92% at 460 nm, higher than that of the popular NiAgPt scheme, and the forward voltage was 3.2-3.3 V, similar to that of the NiAgPt contact. Furthermore, the mean leakage current of CIOITOAlTi-W was 0.12 μA, much lower than 0.54 μA of NiAgPt at -5 V.",

author = "Chae, {S. W.} and Kim, {D. H.} and Kim, {T. G.} and Ko, {K. Y.} and Sung, {Y. M.}",

note = "Funding Information: This work was financially supported by the Samsung Electro-Mechanics Company as well as the MOST/KOSEF through the Quantum Photonic Science Research Center, Korea.",

year = "2007",

doi = "10.1063/1.2740173",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Al-based Ohmic reflectors with low leakage currents and high reflectance for p-GaN flip-chip processes

AU - Chae, S. W.

AU - Kim, D. H.

AU - Kim, T. G.

AU - Ko, K. Y.

AU - Sung, Y. M.

N1 - Funding Information: This work was financially supported by the Samsung Electro-Mechanics Company as well as the MOST/KOSEF through the Quantum Photonic Science Research Center, Korea.

PY - 2007

Y1 - 2007

N2 - The authors report the improvement of InGaNGaN light-emitting diodes on Al reflectors, commonly used as n -type GaN contacts. A Cu-doped indium oxide (CIO) (5 nm) /indium tin oxide (ITO) (380 nm) interlayer was deposited and annealed at 500 °C, after which an Al (400 nm) Ti-W (30 nm) layer was sputtered on the ITO interlayer to reflect the light. The reflectance of CIOITOAlTi-W was ∼92% at 460 nm, higher than that of the popular NiAgPt scheme, and the forward voltage was 3.2-3.3 V, similar to that of the NiAgPt contact. Furthermore, the mean leakage current of CIOITOAlTi-W was 0.12 μA, much lower than 0.54 μA of NiAgPt at -5 V.

AB - The authors report the improvement of InGaNGaN light-emitting diodes on Al reflectors, commonly used as n -type GaN contacts. A Cu-doped indium oxide (CIO) (5 nm) /indium tin oxide (ITO) (380 nm) interlayer was deposited and annealed at 500 °C, after which an Al (400 nm) Ti-W (30 nm) layer was sputtered on the ITO interlayer to reflect the light. The reflectance of CIOITOAlTi-W was ∼92% at 460 nm, higher than that of the popular NiAgPt scheme, and the forward voltage was 3.2-3.3 V, similar to that of the NiAgPt contact. Furthermore, the mean leakage current of CIOITOAlTi-W was 0.12 μA, much lower than 0.54 μA of NiAgPt at -5 V.

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U2 - 10.1063/1.2740173

DO - 10.1063/1.2740173

M3 - Article

AN - SCOPUS:34249111211

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

M1 - 201113

ER -

Al-based Ohmic reflectors with low leakage currents and high reflectance for p-GaN flip-chip processes

Abstract

Bibliographical note

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