Abstract
The authors report the improvement of InGaNGaN light-emitting diodes on Al reflectors, commonly used as n -type GaN contacts. A Cu-doped indium oxide (CIO) (5 nm) /indium tin oxide (ITO) (380 nm) interlayer was deposited and annealed at 500 °C, after which an Al (400 nm) Ti-W (30 nm) layer was sputtered on the ITO interlayer to reflect the light. The reflectance of CIOITOAlTi-W was ∼92% at 460 nm, higher than that of the popular NiAgPt scheme, and the forward voltage was 3.2-3.3 V, similar to that of the NiAgPt contact. Furthermore, the mean leakage current of CIOITOAlTi-W was 0.12 μA, much lower than 0.54 μA of NiAgPt at -5 V.
Original language | English |
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Article number | 201113 |
Journal | Applied Physics Letters |
Volume | 90 |
Issue number | 20 |
DOIs | |
Publication status | Published - 2007 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)