Al-doped ZnO/Ag/Al-doped ZnO multilayer films with a high figure of merit

Jun Ho Kim, Yoon Jong Moon, Sun Kyung Kim, Young Zo Yoo, Tae Yeon Seong

Research output: Contribution to journalArticlepeer-review

38 Citations (Scopus)


In this study, we investigated the effects of the Al-doped ZnO (AZO)-layer thickness on the optical and electrical properties of AZO/Ag/AZO multilayer films deposited on glass substrates at room temperature. The optimal AZO/Ag/AZO (36 nm/19 nm/36 nm) multilayer sample exhibited a transmittance of approximately 93% at 550 nm. As the AZO-layer thickness increased from 9 to 45 nm, the carrier concentration gradually decreased from 1.87×1022 to 6.36×1021 cm-3, while the sheet resistance slightly increased from 3.86 to 4.47 Ω sq-1 and the charge mobility increased from 24.15 to 25.42 cm2 V-1 s-1. The samples had smooth surfaces with a root mean square (RMS) roughness ranging from 0.40 to 1.23 nm. The Haacke figure of merit (FOM) was calculated for the samples as a function of the AZO-layer thickness. The optimal AZO/Ag/AZO multilayer film had the highest FOM of 99.9×10-3 Ω-1.

Original languageEnglish
Pages (from-to)14805-14810
Number of pages6
JournalCeramics International
Issue number10
Publication statusPublished - 2015 Jul 14

Bibliographical note

Publisher Copyright:
© 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.


  • Ag
  • Al-doped ZnO
  • Multilayer film
  • Transparent conducting electrode

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry


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