AlGaN-based ultraviolet light-emitting diodes using fluorine-doped indium tin oxide electrodes

Dong Ju Chae; Dong Yoon Kim; Tae Geun Kim; Yun Mo Sung; Moon Doeck Kim

doi:10.1063/1.3689765

AlGaN-based ultraviolet light-emitting diodes using fluorine-doped indium tin oxide electrodes

Dong Ju Chae, Dong Yoon Kim, Tae Geun Kim, Yun Mo Sung, Moon Doeck Kim

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31 Citations (Scopus)

Abstract

In this paper, improved electrical and optical properties of aluminum gallium nitride (AlGaN)-based ultraviolet light-emitting diodes using fluorine-doped indium tin oxide (F-ITO) electrodes are reported. F-doping was found to increase the work function as well as the energy bandgap of the ITO and, thereby, reduce the Shottky barrier height in contact with p-(Al)GaN. As a result, the optical transmittance increased from 79.7 to 86.9 at 380 nm, while the specific contact resistance decreased from 1.04 10 ^-3 cm ² to 9.12 10 ^-4 cm ² after F-doping, which led to an increase in the output power from 2.41 mW to 5.99 mW.

Original language	English
Article number	081110
Journal	Applied Physics Letters
Volume	100
Issue number	8
DOIs	https://doi.org/10.1063/1.3689765
Publication status	Published - 2012 Feb 20

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "AlGaN-based ultraviolet light-emitting diodes using fluorine-doped indium tin oxide electrodes",

abstract = "In this paper, improved electrical and optical properties of aluminum gallium nitride (AlGaN)-based ultraviolet light-emitting diodes using fluorine-doped indium tin oxide (F-ITO) electrodes are reported. F-doping was found to increase the work function as well as the energy bandgap of the ITO and, thereby, reduce the Shottky barrier height in contact with p-(Al)GaN. As a result, the optical transmittance increased from 79.7 to 86.9 at 380 nm, while the specific contact resistance decreased from 1.04 10 -3 cm 2 to 9.12 10 -4 cm 2 after F-doping, which led to an increase in the output power from 2.41 mW to 5.99 mW.",

author = "{Ju Chae}, Dong and {Yoon Kim}, Dong and {Geun Kim}, Tae and {Mo Sung}, Yun and {Doeck Kim}, Moon",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean Government (MEST) (No. 2011-0028769). This work was also partially supported by LG Innotek Co., Korea.",

year = "2012",

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doi = "10.1063/1.3689765",

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T1 - AlGaN-based ultraviolet light-emitting diodes using fluorine-doped indium tin oxide electrodes

AU - Ju Chae, Dong

AU - Yoon Kim, Dong

AU - Geun Kim, Tae

AU - Mo Sung, Yun

AU - Doeck Kim, Moon

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean Government (MEST) (No. 2011-0028769). This work was also partially supported by LG Innotek Co., Korea.

PY - 2012/2/20

Y1 - 2012/2/20

N2 - In this paper, improved electrical and optical properties of aluminum gallium nitride (AlGaN)-based ultraviolet light-emitting diodes using fluorine-doped indium tin oxide (F-ITO) electrodes are reported. F-doping was found to increase the work function as well as the energy bandgap of the ITO and, thereby, reduce the Shottky barrier height in contact with p-(Al)GaN. As a result, the optical transmittance increased from 79.7 to 86.9 at 380 nm, while the specific contact resistance decreased from 1.04 10 -3 cm 2 to 9.12 10 -4 cm 2 after F-doping, which led to an increase in the output power from 2.41 mW to 5.99 mW.

AB - In this paper, improved electrical and optical properties of aluminum gallium nitride (AlGaN)-based ultraviolet light-emitting diodes using fluorine-doped indium tin oxide (F-ITO) electrodes are reported. F-doping was found to increase the work function as well as the energy bandgap of the ITO and, thereby, reduce the Shottky barrier height in contact with p-(Al)GaN. As a result, the optical transmittance increased from 79.7 to 86.9 at 380 nm, while the specific contact resistance decreased from 1.04 10 -3 cm 2 to 9.12 10 -4 cm 2 after F-doping, which led to an increase in the output power from 2.41 mW to 5.99 mW.

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AlGaN-based ultraviolet light-emitting diodes using fluorine-doped indium tin oxide electrodes

Abstract

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