AlGaN/GaN HEMT based liquid sensors

R. Mehandru, B. Luo, B. S. Kang, Jihyun Kim, F. Ren, S. J. Pearton, C. C. Pan, G. T. Chen, J. I. Chyi

Research output: Contribution to journalArticlepeer-review

76 Citations (Scopus)


An AlGaN/GaN high electron mobility transistor structure was used for sensing different liquids present in the gate region. The forward current showed significant decreases upon exposure of the gate area to solvents (water, acetone) or acids (HCl). The pH sensitivity is due to changes in net surface charge that affects the relative depletion in the channel of the transistor. The results indicate that nitride-based heterostructures may have application in integrated chemical, gas and fluid monitoring sensors.

Original languageEnglish
Pages (from-to)351-353
Number of pages3
JournalSolid-State Electronics
Issue number2
Publication statusPublished - 2004 Feb
Externally publishedYes

Bibliographical note

Funding Information:
The work at UF is partially supported by NSF(CTS-0301178), monitored by Dr. M. Burka and NASA (NAG10-316), monitored by Dr. W. Knott. The work at NCU is partially supported by the National Science Council of ROC under contract NSC-89-2215-E-008-031, and by the Ministry of Education of ROC under the Program for Promoting Academic Excellence of Universities, 89-E-FA06-1-4.

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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