AlGaN/GaN HEMT based liquid sensors

R. Mehandru; B. Luo; B. S. Kang; Jihyun Kim; F. Ren; S. J. Pearton; C. C. Pan; G. T. Chen; J. I. Chyi

doi:10.1016/S0038-1101(03)00318-6

AlGaN/GaN HEMT based liquid sensors

R. Mehandru, B. Luo, B. S. Kang, Jihyun Kim, F. Ren, S. J. Pearton, C. C. Pan, G. T. Chen, J. I. Chyi

Research output: Contribution to journal › Article › peer-review

76 Citations (Scopus)

Abstract

An AlGaN/GaN high electron mobility transistor structure was used for sensing different liquids present in the gate region. The forward current showed significant decreases upon exposure of the gate area to solvents (water, acetone) or acids (HCl). The pH sensitivity is due to changes in net surface charge that affects the relative depletion in the channel of the transistor. The results indicate that nitride-based heterostructures may have application in integrated chemical, gas and fluid monitoring sensors.

Original language	English
Pages (from-to)	351-353
Number of pages	3
Journal	Solid-State Electronics
Volume	48
Issue number	2
DOIs	https://doi.org/10.1016/S0038-1101(03)00318-6
Publication status	Published - 2004 Feb
Externally published	Yes

Bibliographical note

Funding Information:
The work at UF is partially supported by NSF(CTS-0301178), monitored by Dr. M. Burka and NASA (NAG10-316), monitored by Dr. W. Knott. The work at NCU is partially supported by the National Science Council of ROC under contract NSC-89-2215-E-008-031, and by the Ministry of Education of ROC under the Program for Promoting Academic Excellence of Universities, 89-E-FA06-1-4.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/S0038-1101(03)00318-6

Cite this

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title = "AlGaN/GaN HEMT based liquid sensors",

abstract = "An AlGaN/GaN high electron mobility transistor structure was used for sensing different liquids present in the gate region. The forward current showed significant decreases upon exposure of the gate area to solvents (water, acetone) or acids (HCl). The pH sensitivity is due to changes in net surface charge that affects the relative depletion in the channel of the transistor. The results indicate that nitride-based heterostructures may have application in integrated chemical, gas and fluid monitoring sensors.",

author = "R. Mehandru and B. Luo and Kang, {B. S.} and Jihyun Kim and F. Ren and Pearton, {S. J.} and Pan, {C. C.} and Chen, {G. T.} and Chyi, {J. I.}",

note = "Funding Information: The work at UF is partially supported by NSF(CTS-0301178), monitored by Dr. M. Burka and NASA (NAG10-316), monitored by Dr. W. Knott. The work at NCU is partially supported by the National Science Council of ROC under contract NSC-89-2215-E-008-031, and by the Ministry of Education of ROC under the Program for Promoting Academic Excellence of Universities, 89-E-FA06-1-4.",

year = "2004",

month = feb,

doi = "10.1016/S0038-1101(03)00318-6",

language = "English",

volume = "48",

pages = "351--353",

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T1 - AlGaN/GaN HEMT based liquid sensors

AU - Mehandru, R.

AU - Luo, B.

AU - Kang, B. S.

AU - Kim, Jihyun

AU - Ren, F.

AU - Pearton, S. J.

AU - Pan, C. C.

AU - Chen, G. T.

AU - Chyi, J. I.

N1 - Funding Information: The work at UF is partially supported by NSF(CTS-0301178), monitored by Dr. M. Burka and NASA (NAG10-316), monitored by Dr. W. Knott. The work at NCU is partially supported by the National Science Council of ROC under contract NSC-89-2215-E-008-031, and by the Ministry of Education of ROC under the Program for Promoting Academic Excellence of Universities, 89-E-FA06-1-4.

PY - 2004/2

Y1 - 2004/2

N2 - An AlGaN/GaN high electron mobility transistor structure was used for sensing different liquids present in the gate region. The forward current showed significant decreases upon exposure of the gate area to solvents (water, acetone) or acids (HCl). The pH sensitivity is due to changes in net surface charge that affects the relative depletion in the channel of the transistor. The results indicate that nitride-based heterostructures may have application in integrated chemical, gas and fluid monitoring sensors.

AB - An AlGaN/GaN high electron mobility transistor structure was used for sensing different liquids present in the gate region. The forward current showed significant decreases upon exposure of the gate area to solvents (water, acetone) or acids (HCl). The pH sensitivity is due to changes in net surface charge that affects the relative depletion in the channel of the transistor. The results indicate that nitride-based heterostructures may have application in integrated chemical, gas and fluid monitoring sensors.

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DO - 10.1016/S0038-1101(03)00318-6

M3 - Article

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JO - Solid-State Electronics

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ER -

AlGaN/GaN HEMT based liquid sensors

Abstract

Bibliographical note

ASJC Scopus subject areas

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