@inproceedings{a899bb5a682e41098c52066bdd4ebd1f,
title = "AlGaN/GaN High electron mobility transistors and diodes fabricated on large area silicon on poly-SiC (SopSiC) substrates for lower cost and higher yield",
abstract = "The dc and rf performance of AlGaN/GaN High Electron Mobility Transistors (HEMTs) grown by Molecular Beam Epitaxy on Si-on-poly-SiC (SopSiC) substrates is reported. The HEMT structure incorporated a 7 period GaN/AlN superlattice between the AlGaN barrier and GaN channel for improved carrier confinement. The knee voltage of devices with 2 μm gatedrain spacing was 2.12 V and increased to 3 V at 8 μm spacing. The maximum frequency of oscillation, fMAX, was ~40 GHz for devices with 0.5 μm gate length and 2 μm gate-drain spacing. Parameter extraction from the measured rf characteristics showed a maximum intrinsic transconductance of 143 mS.mm-1.",
author = "Anderson, {T. J.} and F. Ren and L. Voss and M. Hlad and Gila, {B. P.} and Pearton, {S. J.} and J. Kim and J. Lin and P. Bove and H. Lahreche and J. Thuret and R. Langer",
year = "2007",
language = "English",
isbn = "1893580091",
series = "2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007",
pages = "137--140",
booktitle = "2007 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007",
note = "22nd International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2007 ; Conference date: 14-05-2007 Through 17-05-2007",
}