AlGaN/GaN High electron mobility transistors and diodes fabricated on large area silicon on poly-SiC (SopSiC) substrates for lower cost and higher yield

T. J. Anderson, F. Ren, L. Voss, M. Hlad, B. P. Gila, S. J. Pearton, J. Kim, J. Lin, P. Bove, H. Lahreche, J. Thuret, R. Langer

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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Engineering & Materials Science