AlGaN/GaN high electron mobility transistors irradiated with 17 MeV protons

Hong Yeol Kim, Jihyun Kim, Sang Pil Yun, Kye Ryung Kim, Travis J. Anderson, Fan Ren, S. J. Pearton

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24 Citations (Scopus)


AlGaN/GaN high electron mobility transistors (HEMTs) with GaN cap layers were irradiated with high-energy (17 MeV) protons to doses up to 2× 1016 cm-2. There was no significant degradation in dc electrical parameters such as drain-source current (IDS) and extrinsic transconductance (gm) of the HEMTs up to a fluency of 7.2× 1013 protons / cm2. At the highest dose of 2× 1016 protons / cm2 there was a decrease of 43% in IDS and a 29% decrease in gm. The data are consistent with the introduction of defect centers in the HEMT structure by the high-energy protons leading to a reduction in carrier concentration and mobility in the two-dimensional electron gas channel. These results show that AlGaN/GaN HEMTs are attractive for space-based applications where high-energy proton fluxes are present.

Original languageEnglish
Pages (from-to)H513-H515
JournalJournal of the Electrochemical Society
Issue number7
Publication statusPublished - 2008

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry


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