AlGaN/GaN high electron mobility transistors irradiated with 17 MeV protons

Hong Yeol Kim; Jihyun Kim; Sang Pil Yun; Kye Ryung Kim; Travis J. Anderson; Fan Ren; S. J. Pearton

doi:10.1149/1.2917256

AlGaN/GaN high electron mobility transistors irradiated with 17 MeV protons

Hong Yeol Kim, Jihyun Kim, Sang Pil Yun, Kye Ryung Kim, Travis J. Anderson, Fan Ren, S. J. Pearton

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

AlGaN/GaN high electron mobility transistors (HEMTs) with GaN cap layers were irradiated with high-energy (17 MeV) protons to doses up to 2× 1016 cm-2. There was no significant degradation in dc electrical parameters such as drain-source current (IDS) and extrinsic transconductance (gm) of the HEMTs up to a fluency of 7.2× 1013 protons / cm2. At the highest dose of 2× 1016 protons / cm2 there was a decrease of 43% in IDS and a 29% decrease in gm. The data are consistent with the introduction of defect centers in the HEMT structure by the high-energy protons leading to a reduction in carrier concentration and mobility in the two-dimensional electron gas channel. These results show that AlGaN/GaN HEMTs are attractive for space-based applications where high-energy proton fluxes are present.

Original language	English
Pages (from-to)	H513-H515
Journal	Journal of the Electrochemical Society
Volume	155
Issue number	7
DOIs	https://doi.org/10.1149/1.2917256
Publication status	Published - 2008

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1149/1.2917256

Cite this

@article{16f6dbf1ddc74387a4e2f20b6ced4f2d,

title = "AlGaN/GaN high electron mobility transistors irradiated with 17 MeV protons",

abstract = "AlGaN/GaN high electron mobility transistors (HEMTs) with GaN cap layers were irradiated with high-energy (17 MeV) protons to doses up to 2× 1016 cm-2. There was no significant degradation in dc electrical parameters such as drain-source current (IDS) and extrinsic transconductance (gm) of the HEMTs up to a fluency of 7.2× 1013 protons / cm2. At the highest dose of 2× 1016 protons / cm2 there was a decrease of 43% in IDS and a 29% decrease in gm. The data are consistent with the introduction of defect centers in the HEMT structure by the high-energy protons leading to a reduction in carrier concentration and mobility in the two-dimensional electron gas channel. These results show that AlGaN/GaN HEMTs are attractive for space-based applications where high-energy proton fluxes are present.",

author = "Kim, {Hong Yeol} and Jihyun Kim and Yun, {Sang Pil} and Kim, {Kye Ryung} and Anderson, {Travis J.} and Fan Ren and Pearton, {S. J.}",

year = "2008",

doi = "10.1149/1.2917256",

language = "English",

volume = "155",

pages = "H513--H515",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Institute of Physics",

number = "7",

}

TY - JOUR

T1 - AlGaN/GaN high electron mobility transistors irradiated with 17 MeV protons

AU - Kim, Hong Yeol

AU - Kim, Jihyun

AU - Yun, Sang Pil

AU - Kim, Kye Ryung

AU - Anderson, Travis J.

AU - Ren, Fan

AU - Pearton, S. J.

PY - 2008

Y1 - 2008

N2 - AlGaN/GaN high electron mobility transistors (HEMTs) with GaN cap layers were irradiated with high-energy (17 MeV) protons to doses up to 2× 1016 cm-2. There was no significant degradation in dc electrical parameters such as drain-source current (IDS) and extrinsic transconductance (gm) of the HEMTs up to a fluency of 7.2× 1013 protons / cm2. At the highest dose of 2× 1016 protons / cm2 there was a decrease of 43% in IDS and a 29% decrease in gm. The data are consistent with the introduction of defect centers in the HEMT structure by the high-energy protons leading to a reduction in carrier concentration and mobility in the two-dimensional electron gas channel. These results show that AlGaN/GaN HEMTs are attractive for space-based applications where high-energy proton fluxes are present.

AB - AlGaN/GaN high electron mobility transistors (HEMTs) with GaN cap layers were irradiated with high-energy (17 MeV) protons to doses up to 2× 1016 cm-2. There was no significant degradation in dc electrical parameters such as drain-source current (IDS) and extrinsic transconductance (gm) of the HEMTs up to a fluency of 7.2× 1013 protons / cm2. At the highest dose of 2× 1016 protons / cm2 there was a decrease of 43% in IDS and a 29% decrease in gm. The data are consistent with the introduction of defect centers in the HEMT structure by the high-energy protons leading to a reduction in carrier concentration and mobility in the two-dimensional electron gas channel. These results show that AlGaN/GaN HEMTs are attractive for space-based applications where high-energy proton fluxes are present.

UR - http://www.scopus.com/inward/record.url?scp=44349193605&partnerID=8YFLogxK

U2 - 10.1149/1.2917256

DO - 10.1149/1.2917256

M3 - Article

AN - SCOPUS:44349193605

SN - 0013-4651

VL - 155

SP - H513-H515

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 7

ER -

AlGaN/GaN high electron mobility transistors irradiated with 17 MeV protons

Abstract

ASJC Scopus subject areas

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this