AlGaN/GaN high electron mobility transistors irradiated with 17 MeV protons

Hong Yeol Kim; Jihyun Kim; Sang Pil Yun; Kye Ryung Kim; Travis J. Anderson; Fan Ren; S. J. Pearton

doi:10.1149/1.2917256

AlGaN/GaN high electron mobility transistors irradiated with 17 MeV protons

Hong Yeol Kim^*, Jihyun Kim, Sang Pil Yun, Kye Ryung Kim, Travis J. Anderson, Fan Ren, S. J. Pearton

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

AlGaN/GaN high electron mobility transistors (HEMTs) with GaN cap layers were irradiated with high-energy (17 MeV) protons to doses up to 2× 1016 cm-2. There was no significant degradation in dc electrical parameters such as drain-source current (IDS) and extrinsic transconductance (gm) of the HEMTs up to a fluency of 7.2× 1013 protons / cm2. At the highest dose of 2× 1016 protons / cm2 there was a decrease of 43% in IDS and a 29% decrease in gm. The data are consistent with the introduction of defect centers in the HEMT structure by the high-energy protons leading to a reduction in carrier concentration and mobility in the two-dimensional electron gas channel. These results show that AlGaN/GaN HEMTs are attractive for space-based applications where high-energy proton fluxes are present.

Original language	English
Pages (from-to)	H513-H515
Journal	Journal of the Electrochemical Society
Volume	155
Issue number	7
DOIs	https://doi.org/10.1149/1.2917256
Publication status	Published - 2008

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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Cite this

@article{16f6dbf1ddc74387a4e2f20b6ced4f2d,

title = "AlGaN/GaN high electron mobility transistors irradiated with 17 MeV protons",

abstract = "AlGaN/GaN high electron mobility transistors (HEMTs) with GaN cap layers were irradiated with high-energy (17 MeV) protons to doses up to 2× 1016 cm-2. There was no significant degradation in dc electrical parameters such as drain-source current (IDS) and extrinsic transconductance (gm) of the HEMTs up to a fluency of 7.2× 1013 protons / cm2. At the highest dose of 2× 1016 protons / cm2 there was a decrease of 43\% in IDS and a 29\% decrease in gm. The data are consistent with the introduction of defect centers in the HEMT structure by the high-energy protons leading to a reduction in carrier concentration and mobility in the two-dimensional electron gas channel. These results show that AlGaN/GaN HEMTs are attractive for space-based applications where high-energy proton fluxes are present.",

author = "Kim, \{Hong Yeol\} and Jihyun Kim and Yun, \{Sang Pil\} and Kim, \{Kye Ryung\} and Anderson, \{Travis J.\} and Fan Ren and Pearton, \{S. J.\}",

year = "2008",

doi = "10.1149/1.2917256",

language = "English",

volume = "155",

pages = "H513--H515",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Institute of Physics",

number = "7",

}

TY - JOUR

T1 - AlGaN/GaN high electron mobility transistors irradiated with 17 MeV protons

AU - Kim, Hong Yeol

AU - Kim, Jihyun

AU - Yun, Sang Pil

AU - Kim, Kye Ryung

AU - Anderson, Travis J.

AU - Ren, Fan

AU - Pearton, S. J.

PY - 2008

Y1 - 2008

N2 - AlGaN/GaN high electron mobility transistors (HEMTs) with GaN cap layers were irradiated with high-energy (17 MeV) protons to doses up to 2× 1016 cm-2. There was no significant degradation in dc electrical parameters such as drain-source current (IDS) and extrinsic transconductance (gm) of the HEMTs up to a fluency of 7.2× 1013 protons / cm2. At the highest dose of 2× 1016 protons / cm2 there was a decrease of 43% in IDS and a 29% decrease in gm. The data are consistent with the introduction of defect centers in the HEMT structure by the high-energy protons leading to a reduction in carrier concentration and mobility in the two-dimensional electron gas channel. These results show that AlGaN/GaN HEMTs are attractive for space-based applications where high-energy proton fluxes are present.

AB - AlGaN/GaN high electron mobility transistors (HEMTs) with GaN cap layers were irradiated with high-energy (17 MeV) protons to doses up to 2× 1016 cm-2. There was no significant degradation in dc electrical parameters such as drain-source current (IDS) and extrinsic transconductance (gm) of the HEMTs up to a fluency of 7.2× 1013 protons / cm2. At the highest dose of 2× 1016 protons / cm2 there was a decrease of 43% in IDS and a 29% decrease in gm. The data are consistent with the introduction of defect centers in the HEMT structure by the high-energy protons leading to a reduction in carrier concentration and mobility in the two-dimensional electron gas channel. These results show that AlGaN/GaN HEMTs are attractive for space-based applications where high-energy proton fluxes are present.

UR - https://www.scopus.com/pages/publications/44349193605

U2 - 10.1149/1.2917256

DO - 10.1149/1.2917256

M3 - Article

AN - SCOPUS:44349193605

SN - 0013-4651

VL - 155

SP - H513-H515

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 7

ER -

AlGaN/GaN high electron mobility transistors irradiated with 17 MeV protons

Abstract

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