AlGaN/GaN high electron mobility transistors irradiated with 17 MeV protons

Engineering & Materials Science

• Protons 100%
• High electron mobility transistors 95%
• Two dimensional electron gas 29%
• Carrier mobility 24%
• Carrier concentration 23%
• Transconductance 19%
• Fluxes 13%
• Degradation 11%
• Defects 11%

Physics & Astronomy

• high electron mobility transistors 85%
• protons 54%
• proton energy 44%
• dosage 27%
• transconductance 22%
• caps 21%
• electron gas 19%
• degradation 15%
• defects 11%
• energy 6%

Chemical Compounds

• Electron Mobility 99%
• Proton 54%
• Two-Dimensional Electron Gas 29%
• Transconductance 25%
• Dose 25%
• Compound Mobility 12%
• Reduction 7%
• Application 5%