AlGaN/GaN high electron mobility transistors irradiated with 17 MeV protons

Keyphrases

• Defect Centers 33%
• Electrical Parameters 33%
• Extrinsic Transconductance 33%
• Fluency 33%
• GaN Cap Layer 33%
• MeV Protons 100%
• Proton Flux 33%

Material Science

• Carrier Concentration 20%
• Carrier Mobility 20%
• Electron Mobility 100%
• Transistor 100%

Earth and Planetary Sciences

• Electron Gas 20%
• High Electron Mobility Transistors 100%
• Proton Energy 40%
• Transconductance 20%