AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (HEMT) were discussed. Sc2O3 was used as the gate oxide and surface passivation. Results showed that Sc2O3 which is deposited by plasma-assisted molecular-beam epitaxy can be used simultaneously as a gate dielectric and as a surface passivation layer and is free of residual hydrogen.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2003 Apr 14|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)