AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation

R. Mehandru; B. Luo; J. Kim; F. Ren; B. P. Gila; A. H. Onstine; C. R. Abernathy; S. J. Pearton; D. Gotthold; R. Birkhahn; B. Peres; R. Fitch; J. Gillespie; T. Jenkins; J. Sewell; D. Via; A. Crespo

doi:10.1063/1.1567051

AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors using Sc₂O₃ as the gate oxide and surface passivation

R. Mehandru^*
, B. Luo
, J. Kim
, F. Ren
, B. P. Gila
, A. H. Onstine
, C. R. Abernathy
, S. J. Pearton
, D. Gotthold
, R. Birkhahn
, B. Peres
, R. Fitch
, J. Gillespie
, T. Jenkins
, J. Sewell
, D. Via
, A. Crespo

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

139 Citations (Scopus)

Abstract

AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (HEMT) were discussed. Sc₂O₃ was used as the gate oxide and surface passivation. Results showed that Sc₂O₃ which is deposited by plasma-assisted molecular-beam epitaxy can be used simultaneously as a gate dielectric and as a surface passivation layer and is free of residual hydrogen.

Original language	English
Pages (from-to)	2530-2532
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	15
DOIs	https://doi.org/10.1063/1.1567051
Publication status	Published - 2003 Apr 14
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1567051

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Mehandru, R., Luo, B., Kim, J., Ren, F., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., Gotthold, D., Birkhahn, R., Peres, B., Fitch, R., Gillespie, J., Jenkins, T., Sewell, J., Via, D., & Crespo, A. (2003). AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors using Sc₂O₃ as the gate oxide and surface passivation. Applied Physics Letters, 82(15), 2530-2532. https://doi.org/10.1063/1.1567051

Mehandru, R, Luo, B, Kim, J, Ren, F, Gila, BP, Onstine, AH, Abernathy, CR, Pearton, SJ, Gotthold, D, Birkhahn, R, Peres, B, Fitch, R, Gillespie, J, Jenkins, T, Sewell, J, Via, D & Crespo, A 2003, 'AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors using Sc₂O₃ as the gate oxide and surface passivation', Applied Physics Letters, vol. 82, no. 15, pp. 2530-2532. https://doi.org/10.1063/1.1567051

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title = "AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation",

abstract = "AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (HEMT) were discussed. Sc2O3 was used as the gate oxide and surface passivation. Results showed that Sc2O3 which is deposited by plasma-assisted molecular-beam epitaxy can be used simultaneously as a gate dielectric and as a surface passivation layer and is free of residual hydrogen.",

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year = "2003",

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doi = "10.1063/1.1567051",

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volume = "82",

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AU - Mehandru, R.

AU - Luo, B.

AU - Kim, J.

AU - Ren, F.

AU - Gila, B. P.

AU - Onstine, A. H.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Gotthold, D.

AU - Birkhahn, R.

AU - Peres, B.

AU - Fitch, R.

AU - Gillespie, J.

AU - Jenkins, T.

AU - Sewell, J.

AU - Via, D.

AU - Crespo, A.

PY - 2003/4/14

Y1 - 2003/4/14

N2 - AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (HEMT) were discussed. Sc2O3 was used as the gate oxide and surface passivation. Results showed that Sc2O3 which is deposited by plasma-assisted molecular-beam epitaxy can be used simultaneously as a gate dielectric and as a surface passivation layer and is free of residual hydrogen.

AB - AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (HEMT) were discussed. Sc2O3 was used as the gate oxide and surface passivation. Results showed that Sc2O3 which is deposited by plasma-assisted molecular-beam epitaxy can be used simultaneously as a gate dielectric and as a surface passivation layer and is free of residual hydrogen.

UR - https://www.scopus.com/pages/publications/0038665178

U2 - 10.1063/1.1567051

DO - 10.1063/1.1567051

M3 - Article

AN - SCOPUS:0038665178

SN - 0003-6951

VL - 82

SP - 2530

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors using Sc₂O₃ as the gate oxide and surface passivation

Abstract

ASJC Scopus subject areas

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