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AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation

  • R. Mehandru*
  • , B. Luo
  • , J. Kim
  • , F. Ren
  • , B. P. Gila
  • , A. H. Onstine
  • , C. R. Abernathy
  • , S. J. Pearton
  • , D. Gotthold
  • , R. Birkhahn
  • , B. Peres
  • , R. Fitch
  • , J. Gillespie
  • , T. Jenkins
  • , J. Sewell
  • , D. Via
  • , A. Crespo
    • *Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

140   Link opens in a new tab Citations (Scopus)

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