Alignment of InAs quantum dots on gaas using the manipulation of strain fields

Kwang Moo Kim; Young Ju Park; Young Min Park; Jong Bum Nah; Chan Kyeong Hyon; Eun Kyu Kim; Jung Ho Park

doi:10.1557/PROC-618-147

Alignment of InAs quantum dots on gaas using the manipulation of strain fields

Kwang Moo Kim, Young Ju Park, Young Min Park, Jong Bum Nah, Chan Kyeong Hyon, Eun Kyu Kim, Jung Ho Park

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We fabricated InAs self-assembled quantum dots (QDs) on strained layer using molecular beam epitaxy. The strained layer consisted of InAs/GaAs superlattice(SL) and GaAs barrier layer on (001) GaAs substrate. Through controlling thickness of the strained layer, we formed two-dimensional alignments of QDs on misfit dislocation arrays along 〈110〉 directions made by strained layer. The increase of the strained layer thickness resulted in a stronger alignment of QDs, which were observed by atomic force microscopy studies. The aligned QDs were confirmed to confine carriers well and have different size distributions by photoluminescence measurement.

Original language	English
Pages (from-to)	147-152
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	618
DOIs	https://doi.org/10.1557/PROC-618-147
Publication status	Published - 2000

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Alignment of InAs quantum dots on gaas using the manipulation of strain fields",

abstract = "We fabricated InAs self-assembled quantum dots (QDs) on strained layer using molecular beam epitaxy. The strained layer consisted of InAs/GaAs superlattice(SL) and GaAs barrier layer on (001) GaAs substrate. Through controlling thickness of the strained layer, we formed two-dimensional alignments of QDs on misfit dislocation arrays along 〈110〉 directions made by strained layer. The increase of the strained layer thickness resulted in a stronger alignment of QDs, which were observed by atomic force microscopy studies. The aligned QDs were confirmed to confine carriers well and have different size distributions by photoluminescence measurement.",

author = "Kim, {Kwang Moo} and Park, {Young Ju} and Park, {Young Min} and Nah, {Jong Bum} and Hyon, {Chan Kyeong} and Kim, {Eun Kyu} and Park, {Jung Ho}",

note = "Funding Information: This work was supported by the MOST Nano-structure Technology project and by the QSRC under the contrast with Dongguk University and Brain Korea 21 (BK2 1) program.",

year = "2000",

doi = "10.1557/PROC-618-147",

language = "English",

volume = "618",

pages = "147--152",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

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TY - JOUR

T1 - Alignment of InAs quantum dots on gaas using the manipulation of strain fields

AU - Kim, Kwang Moo

AU - Park, Young Ju

AU - Park, Young Min

AU - Nah, Jong Bum

AU - Hyon, Chan Kyeong

AU - Kim, Eun Kyu

AU - Park, Jung Ho

N1 - Funding Information: This work was supported by the MOST Nano-structure Technology project and by the QSRC under the contrast with Dongguk University and Brain Korea 21 (BK2 1) program.

PY - 2000

Y1 - 2000

N2 - We fabricated InAs self-assembled quantum dots (QDs) on strained layer using molecular beam epitaxy. The strained layer consisted of InAs/GaAs superlattice(SL) and GaAs barrier layer on (001) GaAs substrate. Through controlling thickness of the strained layer, we formed two-dimensional alignments of QDs on misfit dislocation arrays along 〈110〉 directions made by strained layer. The increase of the strained layer thickness resulted in a stronger alignment of QDs, which were observed by atomic force microscopy studies. The aligned QDs were confirmed to confine carriers well and have different size distributions by photoluminescence measurement.

AB - We fabricated InAs self-assembled quantum dots (QDs) on strained layer using molecular beam epitaxy. The strained layer consisted of InAs/GaAs superlattice(SL) and GaAs barrier layer on (001) GaAs substrate. Through controlling thickness of the strained layer, we formed two-dimensional alignments of QDs on misfit dislocation arrays along 〈110〉 directions made by strained layer. The increase of the strained layer thickness resulted in a stronger alignment of QDs, which were observed by atomic force microscopy studies. The aligned QDs were confirmed to confine carriers well and have different size distributions by photoluminescence measurement.

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U2 - 10.1557/PROC-618-147

DO - 10.1557/PROC-618-147

M3 - Article

AN - SCOPUS:0034450073

SN - 0272-9172

VL - 618

SP - 147

EP - 152

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

ER -

Alignment of InAs quantum dots on gaas using the manipulation of strain fields

Abstract

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